On-wafer-packaging of crystal quartz based devises using low-temperature anodic bonding

Y. Zimin, T. Ueda

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Low-temperature bonding of crystalline quartz and silicon wafers is described. The bonding has a big potential for MEMS applications because it could integrate the processing and packaging in a single high-tech process. In this work, strong bonding of silicon and crystal quartz wafers close to the mechanical strength of the initial materials has been achieved. Tensile test shows a disruptive stress of the samples at about 35 MPa. High bonding strength is associated with minimization of the residual stresses, optimization of surface activation, and application of an electric field during annealing. Lowest possible annealing temperature and the optimum thickness ratio of silicon and quartz layers have been used in order to minimize the residual stresses.

    Original languageEnglish
    Title of host publicationDTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
    Pages148-151
    Number of pages4
    Publication statusPublished - 2011
    Event2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence
    Duration: 2011 May 112011 May 13

    Other

    Other2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011
    CityAix-en-Provence
    Period11/5/1111/5/13

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    ASJC Scopus subject areas

    • Hardware and Architecture

    Cite this

    Zimin, Y., & Ueda, T. (2011). On-wafer-packaging of crystal quartz based devises using low-temperature anodic bonding. In DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (pp. 148-151). [6107974]