One-dimensional bromo-bridged NiIII complexes [Ni(S,S-bn) 2Br]Br2 (S,S-bn =2S,3S-diaminobutane): Synthesis, physical properties, and electrostatic carrier doping

Shinya Takaishi*, Masahiro Yamashita, Hiroyuki Matsuzaki, Hiroshi Okamoto, Hisaaki Tanaka, Shin Ichi Kuroda, Atsushi Goto, Tadashi Shimizu, Taishi Takenobu, Yoshihiro Iwasa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

A new bromo-bridged NiIII compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on NiIII species (J = (2350 ± 500) K) that result from the strong covalency of the Ni - Br bond and the spin-Peierls transition below 150K. This was shown by the results of magnetic susceptibility and 81Br nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field-effect transistor device. This compound also showed n-type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of NiII impurities.

Original languageEnglish
Pages (from-to)472-477
Number of pages6
JournalChemistry - A European Journal
Volume14
Issue number2
DOIs
Publication statusPublished - 2008
Externally publishedYes

Keywords

  • Bridging ligands
  • Carrier doping
  • EPR spectroscopy
  • Field-effect transistors
  • Nickel

ASJC Scopus subject areas

  • Chemistry(all)

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