Opening of a charge gap with v trimerization in BaV10 O15

Tomomasa Kajita, T. Kanzaki, T. Suzuki, J. E. Kim, K. Kato, M. Takata, Takuro Katsufuji

    Research output: Contribution to journalArticle

    33 Citations (Scopus)

    Abstract

    A structural phase transition at Tc 130K in BaV10 O15 containing modified V3+ (3 d2) triangular lattices was studied. It was found that the electrical resistivity jumps by three orders of magnitude and a gap opens up in the optical conductivity spectrum at Tc. It was also found from synchrotron x-ray powder-diffraction measurement that the trimerization of the V ions occurs below Tc. These results indicate that the orbital ordering of V t2g states occurs at Tc and that induces a charge gap near the Fermi level in the electronic states of BaV10 O15.

    Original languageEnglish
    Article number060405
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume81
    Issue number6
    DOIs
    Publication statusPublished - 2010 Feb 10

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    Optical conductivity
    Electronic states
    Fermi level
    Synchrotrons
    Phase transitions
    Ions
    X rays
    synchrotrons
    orbitals
    conductivity
    electrical resistivity
    electronics
    diffraction
    ions
    x rays
    Powder Diffraction

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Opening of a charge gap with v trimerization in BaV10 O15. / Kajita, Tomomasa; Kanzaki, T.; Suzuki, T.; Kim, J. E.; Kato, K.; Takata, M.; Katsufuji, Takuro.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 6, 060405, 10.02.2010.

    Research output: Contribution to journalArticle

    Kajita, Tomomasa ; Kanzaki, T. ; Suzuki, T. ; Kim, J. E. ; Kato, K. ; Takata, M. ; Katsufuji, Takuro. / Opening of a charge gap with v trimerization in BaV10 O15. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 6.
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