Opening of a charge gap with v trimerization in BaV10 O15

T. Kajita, T. Kanzaki, T. Suzuki, J. E. Kim, K. Kato, M. Takata, T. Katsufuji

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Abstract

A structural phase transition at Tc 130K in BaV10 O15 containing modified V3+ (3 d2) triangular lattices was studied. It was found that the electrical resistivity jumps by three orders of magnitude and a gap opens up in the optical conductivity spectrum at Tc. It was also found from synchrotron x-ray powder-diffraction measurement that the trimerization of the V ions occurs below Tc. These results indicate that the orbital ordering of V t2g states occurs at Tc and that induces a charge gap near the Fermi level in the electronic states of BaV10 O15.

Original languageEnglish
Article number060405
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number6
DOIs
Publication statusPublished - 2010 Feb 10

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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