Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Atomic switches are nanoionic devices that are operated by controlling redox reactions and the local migration of metal ions in solids. The essential mechanism is the growth and shrinkage of a metal filament formed between two electrodes, resulting in repeatable resistive switching between high-resistance and low-resistance states, which can be used for next-generation nonvolatile memories. This review focuses on the operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer as an ion-conducting matrix. First, we describe the operating mechanism of a two-terminal atomic switch based on nucleation theory and present the results of temperature dependence and switching speeds to determine the validity of our switching model. Then, we discuss the effects that moisture absorption in the oxide matrix has on the fundamental processes and switching behavior in order to elucidate the importance of the porosity of the oxide matrix. Finally, we demonstrate a three-terminal atomic switch and describe the impact of the anode material or metal-ion species. These findings will contribute to the development of next-generation logic circuits with low-voltage operation and low-power consumption.

    Original languageEnglish
    Pages (from-to)1-14
    Number of pages14
    JournalJournal of Electroceramics
    DOIs
    Publication statusAccepted/In press - 2017 Jan 14

    Fingerprint

    Oxides
    metal oxides
    switches
    Metals
    Switches
    Metal ions
    metal ions
    matrices
    logic circuits
    oxides
    Redox reactions
    Logic circuits
    low resistance
    high resistance
    shrinkage
    moisture
    low voltage
    filaments
    Anodes
    anodes

    Keywords

    • Atom transistor
    • Atomic switch
    • Metal ion transport
    • Metal oxides
    • Moisture absorption
    • Redox reactions
    • Resistive switching

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Condensed Matter Physics
    • Mechanics of Materials
    • Materials Chemistry
    • Electrical and Electronic Engineering

    Cite this

    Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer. / Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Terabe, Kazuya; Aono, Masakazu.

    In: Journal of Electroceramics, 14.01.2017, p. 1-14.

    Research output: Contribution to journalArticle

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    AU - Aono, Masakazu

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