Opportunity of single atom control for quantum processing in silicon and diamond

Takahiro Shinada; Prati Enrico; Syuto Tamura; Takashi Tanii; Tokuyuki Teraji; Shinobu Onoda; Takeshi Ohshima; Liam P. McGuinness; Lachlan Rogers; Boris Naydenov; Fedor Jelezko; Junichi Isoya

doi:10.1109/SNW.2014.7348533

Opportunity of single atom control for quantum processing in silicon and diamond

Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348533
Publication status	Published - 2015 Dec 4
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 2014 Jun 8 → 2014 Jun 9

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Other

Other	Silicon Nanoelectronics Workshop, SNW 2014
Country	United States
City	Honolulu
Period	14/6/8 → 14/6/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SNW.2014.7348533

Fingerprint Dive into the research topics of 'Opportunity of single atom control for quantum processing in silicon and diamond'. Together they form a unique fingerprint.

Cite this

Shinada, T., Enrico, P., Tamura, S., Tanii, T., Teraji, T., Onoda, S., Ohshima, T., McGuinness, L. P., Rogers, L., Naydenov, B., Jelezko, F., & Isoya, J. (2015). Opportunity of single atom control for quantum processing in silicon and diamond. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348533] (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348533

Opportunity of single atom control for quantum processing in silicon and diamond. / Shinada, Takahiro; Enrico, Prati; Tamura, Syuto; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Ohshima, Takeshi; McGuinness, Liam P.; Rogers, Lachlan; Naydenov, Boris; Jelezko, Fedor; Isoya, Junichi.

2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348533 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shinada, T, Enrico, P, Tamura, S, Tanii, T, Teraji, T, Onoda, S, Ohshima, T, McGuinness, LP, Rogers, L, Naydenov, B, Jelezko, F & Isoya, J 2015, Opportunity of single atom control for quantum processing in silicon and diamond. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348533, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 14/6/8. https://doi.org/10.1109/SNW.2014.7348533

Shinada, Takahiro ; Enrico, Prati ; Tamura, Syuto ; Tanii, Takashi ; Teraji, Tokuyuki ; Onoda, Shinobu ; Ohshima, Takeshi ; McGuinness, Liam P. ; Rogers, Lachlan ; Naydenov, Boris ; Jelezko, Fedor ; Isoya, Junichi. / Opportunity of single atom control for quantum processing in silicon and diamond. 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. (2014 Silicon Nanoelectronics Workshop, SNW 2014).

@inproceedings{620195e5dd2c4882a997905af635463b,

title = "Opportunity of single atom control for quantum processing in silicon and diamond",

abstract = "Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.",

author = "Takahiro Shinada and Prati Enrico and Syuto Tamura and Takashi Tanii and Tokuyuki Teraji and Shinobu Onoda and Takeshi Ohshima and McGuinness, {Liam P.} and Lachlan Rogers and Boris Naydenov and Fedor Jelezko and Junichi Isoya",

note = "Funding Information: This work is supported by Grant-in-Aid for Scientific Research (nos. 25289109 and 23226009) from MEXT, Japan. Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348533",

language = "English",

series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

}

TY - GEN

T1 - Opportunity of single atom control for quantum processing in silicon and diamond

AU - Shinada, Takahiro

AU - Enrico, Prati

AU - Tamura, Syuto

AU - Tanii, Takashi

AU - Teraji, Tokuyuki

AU - Onoda, Shinobu

AU - Ohshima, Takeshi

AU - McGuinness, Liam P.

AU - Rogers, Lachlan

AU - Naydenov, Boris

AU - Jelezko, Fedor

AU - Isoya, Junichi

PY - 2015/12/4

Y1 - 2015/12/4

N2 - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

AB - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

UR - http://www.scopus.com/inward/record.url?scp=84963799344&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963799344&partnerID=8YFLogxK

U2 - 10.1109/SNW.2014.7348533

DO - 10.1109/SNW.2014.7348533

M3 - Conference contribution

AN - SCOPUS:84963799344

T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Silicon Nanoelectronics Workshop, SNW 2014

Y2 - 8 June 2014 through 9 June 2014

ER -

Opportunity of single atom control for quantum processing in silicon and diamond

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this