Abstract
Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
| Original language | English |
|---|---|
| Title of host publication | 2014 Silicon Nanoelectronics Workshop, SNW 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781479956777 |
| DOIs | |
| Publication status | Published - 2015 Dec 4 |
| Event | Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 2014 Jun 8 → 2014 Jun 9 |
Other
| Other | Silicon Nanoelectronics Workshop, SNW 2014 |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 14/6/8 → 14/6/9 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Opportunity of single atom control for quantum processing in silicon and diamond. / Shinada, Takahiro; Enrico, Prati; Tamura, Syuto; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Ohshima, Takeshi; McGuinness, Liam P.; Rogers, Lachlan; Naydenov, Boris; Jelezko, Fedor; Isoya, Junichi.
2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348533.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Opportunity of single atom control for quantum processing in silicon and diamond
AU - Shinada, Takahiro
AU - Enrico, Prati
AU - Tamura, Syuto
AU - Tanii, Takashi
AU - Teraji, Tokuyuki
AU - Onoda, Shinobu
AU - Ohshima, Takeshi
AU - McGuinness, Liam P.
AU - Rogers, Lachlan
AU - Naydenov, Boris
AU - Jelezko, Fedor
AU - Isoya, Junichi
PY - 2015/12/4
Y1 - 2015/12/4
N2 - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
AB - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
UR - http://www.scopus.com/inward/record.url?scp=84963799344&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963799344&partnerID=8YFLogxK
U2 - 10.1109/SNW.2014.7348533
DO - 10.1109/SNW.2014.7348533
M3 - Conference contribution
AN - SCOPUS:84963799344
SN - 9781479956777
BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -