Abstract
Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
Original language | English |
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Title of host publication | 2014 Silicon Nanoelectronics Workshop, SNW 2014 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781479956777 |
DOIs | |
Publication status | Published - 2015 Dec 4 |
Event | Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 2014 Jun 8 → 2014 Jun 9 |
Other
Other | Silicon Nanoelectronics Workshop, SNW 2014 |
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Country | United States |
City | Honolulu |
Period | 14/6/8 → 14/6/9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering