Opportunity of single atom control for quantum processing in silicon and diamond

Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

    Original languageEnglish
    Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781479956777
    DOIs
    Publication statusPublished - 2015 Dec 4
    EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
    Duration: 2014 Jun 82014 Jun 9

    Other

    OtherSilicon Nanoelectronics Workshop, SNW 2014
    CountryUnited States
    CityHonolulu
    Period14/6/814/6/9

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Shinada, T., Enrico, P., Tamura, S., Tanii, T., Teraji, T., Onoda, S., Ohshima, T., McGuinness, L. P., Rogers, L., Naydenov, B., Jelezko, F., & Isoya, J. (2015). Opportunity of single atom control for quantum processing in silicon and diamond. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348533] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348533