Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si

Hiroshi Katsumata, Yunosuke Makita, Naoto Kobayashi, Hajime Shibata, Masataka Hasegawa, Igor Aksenov, Shinji Kimura, Akira Obara, Shin Ichiro Uekusa

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Abstract

Mass-separated 56Fe+ ions were implanted into Si(100) at 350°C using three different energies and doses of 140 keV (1.32×1017 cm-2), 80 keV (6.20×1016 cm-2), and 50 keV (3.56×1016 cm-2). Their optical properties were investigated as a function of subsequent annealing temperature and its duration time. X-ray diffraction analysis revealed that polycrystalline semiconducting β-FeSi2 layers are formed in the as-implanted and annealed samples. From Rutherford backscattering spectrometry analysis, the formation of β-FeSi2 up to the surface was confirmed, and the average thickness and composition of the layers at peak concentration were estimated to be 70-75 nm and Fe:Si = 1:2.0-2.2, respectively. The types of optical transition and the inverse logarithmic slope (E0) of the Urbach tail were investigated using room temperature optical absorption measurements. All the synthesized β-FeSi2 layers exhibited a direct transition with direct band-gap energies (Edir g) of 0.802-0.869 eV and with high optical absorption coefficients extending to 105 cm-1 at photon energy above 1.0 eV. The E0 value characteristic of the Urbach tail was observed to decrease from 260 to 100 meV with elevating annealing temperature. Some of the materials having E0<160 meV showed two strong photoluminescence (PL) emissions peaked at 0.805-0.807 eV (No. 1) and 0.840-0.843 eV (No. 2) at 2 K, whereas those with E0>250 meV exhibited only weak emissions. From the results of the temperature- and excitation power-dependent PL measurements, emissions Nos. 1 and 2 were attributed to the trap-related recombinations related to β-FeSi2, with thermal activation (quenching) energies of 54.7 and 46.7 meV, respectively.

Original languageEnglish
Pages (from-to)5955-5962
Number of pages8
JournalJournal of Applied Physics
Volume80
Issue number10
Publication statusPublished - 1996 Nov 15
Externally publishedYes

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implantation
optical absorption
photoluminescence
ions
annealing
optical transition
temperature
energy
backscattering
absorptivity
quenching
traps
activation
slopes
optical properties
dosage
photons
room temperature
diffraction
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Katsumata, H., Makita, Y., Kobayashi, N., Shibata, H., Hasegawa, M., Aksenov, I., ... Uekusa, S. I. (1996). Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si. Journal of Applied Physics, 80(10), 5955-5962.

Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si. / Katsumata, Hiroshi; Makita, Yunosuke; Kobayashi, Naoto; Shibata, Hajime; Hasegawa, Masataka; Aksenov, Igor; Kimura, Shinji; Obara, Akira; Uekusa, Shin Ichiro.

In: Journal of Applied Physics, Vol. 80, No. 10, 15.11.1996, p. 5955-5962.

Research output: Contribution to journalArticle

Katsumata, H, Makita, Y, Kobayashi, N, Shibata, H, Hasegawa, M, Aksenov, I, Kimura, S, Obara, A & Uekusa, SI 1996, 'Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si', Journal of Applied Physics, vol. 80, no. 10, pp. 5955-5962.
Katsumata, Hiroshi ; Makita, Yunosuke ; Kobayashi, Naoto ; Shibata, Hajime ; Hasegawa, Masataka ; Aksenov, Igor ; Kimura, Shinji ; Obara, Akira ; Uekusa, Shin Ichiro. / Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si. In: Journal of Applied Physics. 1996 ; Vol. 80, No. 10. pp. 5955-5962.
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AU - Katsumata, Hiroshi

AU - Makita, Yunosuke

AU - Kobayashi, Naoto

AU - Shibata, Hajime

AU - Hasegawa, Masataka

AU - Aksenov, Igor

AU - Kimura, Shinji

AU - Obara, Akira

AU - Uekusa, Shin Ichiro

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