Optical and structural studies in InGaN quantum well structure laser diodes

Shigefusa F. Chichibu, Takashi Azuhata, Mutsumi Sugiyama, Toshio Kitamura, Yuuki Ishida, Hajime Okumura, Hisayuki Nakanishi, Takayuki Sota, Takashi Mukai

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.

Original languageEnglish
Pages (from-to)2177-2183
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number6
DOIs
Publication statusPublished - 2001 Nov 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chichibu, S. F., Azuhata, T., Sugiyama, M., Kitamura, T., Ishida, Y., Okumura, H., Nakanishi, H., Sota, T., & Mukai, T. (2001). Optical and structural studies in InGaN quantum well structure laser diodes. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(6), 2177-2183. https://doi.org/10.1116/1.1418404