Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Keisuke Ishii, Yoshimichi Ohki, Hiroyuki Nishikawa

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

    Original languageEnglish
    Pages (from-to)5418-5422
    Number of pages5
    JournalJournal of Applied Physics
    Volume76
    Issue number9
    DOIs
    Publication statusPublished - 1994

    Fingerprint

    vapor deposition
    decay
    luminescence
    exponential functions
    synchrotron radiation
    oxygen
    curves
    thin films
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Ohki, Yoshimichi; Nishikawa, Hiroyuki.

    In: Journal of Applied Physics, Vol. 76, No. 9, 1994, p. 5418-5422.

    Research output: Contribution to journalArticle

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    author = "Keisuke Ishii and Yoshimichi Ohki and Hiroyuki Nishikawa",
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    AB - Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

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