Optical characterization of low-energy nitrogen-ion doped GaAs

Takayuki Shima, Yunosuke Makita, Shinji Kimura, Tsutomu Iida, Hirokazu Sanpei, Misao Yamaguchi, Kazuhiro Kudo, Kuniaki Tanaka, Naoto Kobayashi, Adarsh Sandhu, Yasushi Hoshino

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Optical characterization of nitrogen (N)-doped GaAs was performed by low-temperature photoluminescence (PL) measurements. N doping in GaAs was successfully made by irradiating low-energy (100 eV) N+ ion beam during the growth of GaAs using the combined ion beam and molecular beam epitaxy (CIBMBE) system. For the sample with N+ ion beam current density (IN) of 3 nA/cm2, which correspond to N concentration ([N]) of ∼ 5 × 1017 cm-3, two sharp PL emissions were observed at 1.508 eV (X1) and 1.495 eV (X2). For the sample with IN of 75 nA/cm2 ([N]≈ 1 × 1019 cm-3), several novel PL emissions tentatively labeled by Yj (j = 1, ..., 8) were observed in the energy range of 1.491-1.449 eV by furnace annealing at 750°C for 20 min. Photoluminescence excitation measurements indicated that X1 is correlated with the PL emission at 1.514 eV. Since the energy separation between individual Yj (j = 1, ..., 8) and X2 is almost linear to r-3 k, where rk is the distance between nitrogen-nitrogen (NN) pairs, we ascribed X2 and Yj as the radiative transition of excitons bound to isolated N and that to N-N pairs, respectively.

Original languageEnglish
Pages (from-to)437-441
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume127-128
Publication statusPublished - 1997 May
Externally publishedYes

Fingerprint

nitrogen ions
Photoluminescence
Nitrogen
Ions
photoluminescence
Ion beams
ion beams
nitrogen
energy
Electron transitions
beam currents
Molecular beam epitaxy
Excitons
furnaces
Furnaces
Current density
molecular beam epitaxy
Doping (additives)
excitons
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Shima, T., Makita, Y., Kimura, S., Iida, T., Sanpei, H., Yamaguchi, M., ... Hoshino, Y. (1997). Optical characterization of low-energy nitrogen-ion doped GaAs. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127-128, 437-441.

Optical characterization of low-energy nitrogen-ion doped GaAs. / Shima, Takayuki; Makita, Yunosuke; Kimura, Shinji; Iida, Tsutomu; Sanpei, Hirokazu; Yamaguchi, Misao; Kudo, Kazuhiro; Tanaka, Kuniaki; Kobayashi, Naoto; Sandhu, Adarsh; Hoshino, Yasushi.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 127-128, 05.1997, p. 437-441.

Research output: Contribution to journalArticle

Shima, T, Makita, Y, Kimura, S, Iida, T, Sanpei, H, Yamaguchi, M, Kudo, K, Tanaka, K, Kobayashi, N, Sandhu, A & Hoshino, Y 1997, 'Optical characterization of low-energy nitrogen-ion doped GaAs', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 127-128, pp. 437-441.
Shima, Takayuki ; Makita, Yunosuke ; Kimura, Shinji ; Iida, Tsutomu ; Sanpei, Hirokazu ; Yamaguchi, Misao ; Kudo, Kazuhiro ; Tanaka, Kuniaki ; Kobayashi, Naoto ; Sandhu, Adarsh ; Hoshino, Yasushi. / Optical characterization of low-energy nitrogen-ion doped GaAs. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1997 ; Vol. 127-128. pp. 437-441.
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AB - Optical characterization of nitrogen (N)-doped GaAs was performed by low-temperature photoluminescence (PL) measurements. N doping in GaAs was successfully made by irradiating low-energy (100 eV) N+ ion beam during the growth of GaAs using the combined ion beam and molecular beam epitaxy (CIBMBE) system. For the sample with N+ ion beam current density (IN) of 3 nA/cm2, which correspond to N concentration ([N]) of ∼ 5 × 1017 cm-3, two sharp PL emissions were observed at 1.508 eV (X1) and 1.495 eV (X2). For the sample with IN of 75 nA/cm2 ([N]≈ 1 × 1019 cm-3), several novel PL emissions tentatively labeled by Yj (j = 1, ..., 8) were observed in the energy range of 1.491-1.449 eV by furnace annealing at 750°C for 20 min. Photoluminescence excitation measurements indicated that X1 is correlated with the PL emission at 1.514 eV. Since the energy separation between individual Yj (j = 1, ..., 8) and X2 is almost linear to r-3 k, where rk is the distance between nitrogen-nitrogen (NN) pairs, we ascribed X2 and Yj as the radiative transition of excitons bound to isolated N and that to N-N pairs, respectively.

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