Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon

H. Katsumata, Y. Makita, H. Takahashi, H. Shibata, Naoto Kobayashi, M. Hasegawa, S. Kimura, A. Obara, J. Tanabe, S. Uekusa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ferrosilicon (FeSi2) grains (99.9%) were evaporated at room temperature onto the (100)-oriented n-type FZ Si substrates using electron beam deposition technique. Optical, electrical and structural properties were systematically investigated as a function of subsequent isochronal (2 hrs) annealing temperature (Ta) in the range of 400 to approximately 950 °C. X-ray diffraction and Raman scattering analysis suggested the formation of polycrystalline β-FeSi2 above Ta = 500 °C, whereas above Ta = 800 °C, Si agglomeration was observed to form. The electrical resistivity of these samples reached a maximum (0.542 Ω·cm) at Ta = 700 °C, and then it decreased with increasing Ta. Its decrease process was explained by considering the creation of Si vacancies, which could presumably be acting as holes. It is of great interest that in Ta = 600 to approximately 800 °C, the majority carrier converts from n- to p-type. Typical carrier concentrations and mobilities were determined to be μn = 39.4 cm2/V·sec, ne = 6.59×1017 cm-3 for n-type β-FeSi2 with Ta = 600 °C and μh = 20.3 cm2/V·sec, nh = 2.22×1018 cm-3 for p-type β-FeSi2 with Ta = 850 °C. Optical absorption measurements revealed that the nature of the bandgap varies from an indirect to direct one with increasing Ta.

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
Pages479-483
Number of pages5
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 - Pasadena, CA, USA
Duration: 1996 Mar 261996 Mar 29

Other

OtherProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96
CityPasadena, CA, USA
Period96/3/2696/3/29

Fingerprint

Structural properties
Electron beams
Evaporation
Electric properties
Optical properties
Thin films
Temperature
Carrier mobility
Light absorption
Vacancies
Carrier concentration
Raman scattering
Energy gap
Agglomeration
Annealing
X ray diffraction
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Katsumata, H., Makita, Y., Takahashi, H., Shibata, H., Kobayashi, N., Hasegawa, M., ... Uekusa, S. (1996). Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. In International Conference on Thermoelectrics, ICT, Proceedings (pp. 479-483)

Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. / Katsumata, H.; Makita, Y.; Takahashi, H.; Shibata, H.; Kobayashi, Naoto; Hasegawa, M.; Kimura, S.; Obara, A.; Tanabe, J.; Uekusa, S.

International Conference on Thermoelectrics, ICT, Proceedings. 1996. p. 479-483.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Katsumata, H, Makita, Y, Takahashi, H, Shibata, H, Kobayashi, N, Hasegawa, M, Kimura, S, Obara, A, Tanabe, J & Uekusa, S 1996, Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. in International Conference on Thermoelectrics, ICT, Proceedings. pp. 479-483, Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96, Pasadena, CA, USA, 96/3/26.
Katsumata H, Makita Y, Takahashi H, Shibata H, Kobayashi N, Hasegawa M et al. Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. In International Conference on Thermoelectrics, ICT, Proceedings. 1996. p. 479-483
Katsumata, H. ; Makita, Y. ; Takahashi, H. ; Shibata, H. ; Kobayashi, Naoto ; Hasegawa, M. ; Kimura, S. ; Obara, A. ; Tanabe, J. ; Uekusa, S. / Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. International Conference on Thermoelectrics, ICT, Proceedings. 1996. pp. 479-483
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AU - Katsumata, H.

AU - Makita, Y.

AU - Takahashi, H.

AU - Shibata, H.

AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Kimura, S.

AU - Obara, A.

AU - Tanabe, J.

AU - Uekusa, S.

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