Optical energy gap measurement of plasma chemical vapor deposition very thin films using evanescent wave

Naganori Takezawa, Isamu Kato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We propose the use of an evanescent field of waveguided light transmitted along a portion of an optical fiber with the cladding removed (a cladless optical fiber) to obtain the optical energy gap (E0) of a semiconductor. Through our study of this new method of measurement, it is clarified that E0 of hydrogenated amorphous silicon (a-Si:H) semiconductor can be determined using a longer fabricated film which is thinner than ordinarily used. While ordinary methods of measurement require a film thickness on the order of 1 μm, this new method of measurement requires a film thickness on the order of 4 nm, with the cladless part of 50 mm in length.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
Issue number10 A
Publication statusPublished - 1993 Oct 1

Fingerprint

evanescent waves
Chemical vapor deposition
Energy gap
vapor deposition
Plasmas
Thin films
Film thickness
Optical fibers
film thickness
thin films
optical fibers
Semiconductor materials
Evanescent fields
Amorphous silicon
amorphous silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical energy gap measurement of plasma chemical vapor deposition very thin films using evanescent wave. / Takezawa, Naganori; Kato, Isamu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 32, No. 10 A, 01.10.1993.

Research output: Contribution to journalArticle

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