Optical input power tolerance of InGaAsP electroabsorption modulator

Noriyoshi Hoshi, Takashi Mitsuma, Hideaki Tanaka, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherIEEE
Pages115-118
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz
Duration: 1999 May 161999 May 20

Other

OtherProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)
CityDavos, Switz
Period99/5/1699/5/20

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ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Hoshi, N., Mitsuma, T., Tanaka, H., & Matsushima, Y. (1999). Optical input power tolerance of InGaAsP electroabsorption modulator. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 115-118). IEEE.