Optical interconnect technologies for high-speed VLSI chips using silicon nano-photonics

Keishi Ohashi, Junichi Fujikata, Masafumi Nakada, Tsutomu Ishi, Kenichi Nishi, Hirohito Yamada, Muneo Fukaishi, Masayuki Mizuno, Koichi Nose, Ichiro Ogura, Yutaka Urino, Toshio Baba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Optoelectronic and electrooptic elements are integrated on VLSI chips. The junction capacitance of a nano-photodiode is extremely low (<10aF), which permits a high load resistance to be used, resulting in higher output voltage at high frequencies. A ceramic Pb(,ZrTi)O3 film with average crystallite diameter below 20nm has a high electro-optical coefficient (>150pm/V) suitable for on-chip modulators.

Original languageEnglish
Title of host publication2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
Pages426+417
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 2006 Feb 62006 Feb 9

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Conference

Conference2006 IEEE International Solid-State Circuits Conference, ISSCC
CountryUnited States
CitySan Francisco, CA
Period06/2/606/2/9

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ohashi, K., Fujikata, J., Nakada, M., Ishi, T., Nishi, K., Yamada, H., Fukaishi, M., Mizuno, M., Nose, K., Ogura, I., Urino, Y., & Baba, T. (2006). Optical interconnect technologies for high-speed VLSI chips using silicon nano-photonics. In 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers (pp. 426+417). [1696224] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).