Optical investigation of GaAs growth process in flow-rate modulation epitaxy

Naoki Kobayashi, Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of P-polarized light incident at the Brewster angle. This configuration minimizes bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during flow-rate Modulation Epitaxy (FME) of GaAs is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition process of Ga and As precursors can be studied by SPA. We demonstrate the investigation of decomposition process of Ga organometals, and discuss the growth mechanisms of FME and atomic layer epitaxy.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Editors Anon
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages881-884
Number of pages4
Publication statusPublished - 1990
Externally publishedYes
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

Fingerprint

Epitaxial growth
Flow rate
Modulation
Atomic layer epitaxy
Light reflection
Decomposition
Monitoring
Light polarization
Signal to noise ratio

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, N., Makimoto, T., Yamauchi, Y., & Horikoshi, Y. (1990). Optical investigation of GaAs growth process in flow-rate modulation epitaxy. In Anon (Ed.), Conference on Solid State Devices and Materials (pp. 881-884). Tokyo, Japan: Publ by Business Cent for Acad Soc Japan.

Optical investigation of GaAs growth process in flow-rate modulation epitaxy. / Kobayashi, Naoki; Makimoto, Toshiki; Yamauchi, Yoshiharu; Horikoshi, Yoshiji.

Conference on Solid State Devices and Materials. ed. / Anon. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1990. p. 881-884.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, N, Makimoto, T, Yamauchi, Y & Horikoshi, Y 1990, Optical investigation of GaAs growth process in flow-rate modulation epitaxy. in Anon (ed.), Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, Tokyo, Japan, pp. 881-884, 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 90/8/22.
Kobayashi N, Makimoto T, Yamauchi Y, Horikoshi Y. Optical investigation of GaAs growth process in flow-rate modulation epitaxy. In Anon, editor, Conference on Solid State Devices and Materials. Tokyo, Japan: Publ by Business Cent for Acad Soc Japan. 1990. p. 881-884
Kobayashi, Naoki ; Makimoto, Toshiki ; Yamauchi, Yoshiharu ; Horikoshi, Yoshiji. / Optical investigation of GaAs growth process in flow-rate modulation epitaxy. Conference on Solid State Devices and Materials. editor / Anon. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1990. pp. 881-884
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