Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Taishi Takenobu; Yuji Murayama; Masashi Shiraishi; Yoshihiro Iwasa

doi:10.1143/JJAP.45.L1190

Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Taishi Takenobu^*, Yuji Murayama, Masashi Shiraishi, Yoshihiro Iwasa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	42-45
DOIs	https://doi.org/10.1143/JJAP.45.L1190
Publication status	Published - 2006 Nov 10
Externally published	Yes

Keywords

Field-effect device
Optical properties
Single-walled carbon nanotube
Thin film

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1143/JJAP.45.L1190

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abstract = "Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.",

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AU - Takenobu, Taishi

AU - Murayama, Yuji

AU - Shiraishi, Masashi

AU - Iwasa, Yoshihiro

PY - 2006/11/10

Y1 - 2006/11/10

N2 - Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

AB - Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

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KW - Optical properties

KW - Single-walled carbon nanotube

KW - Thin film

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Abstract

Keywords

ASJC Scopus subject areas

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