Abstract
We report on all optically active phonon frequencies of wurtzite GaN determined using Raman, infrared reflection, and attenuated total reflection spectra of a high quality GaN film of 2 μm thickness. We also show results of lattice dynamical calculations using a rigid ion model. Force constants and charge as fitting parameters were determined so as to reproduce all zone-center phonon frequencies and sound velocities for the high symmetry lines. We present phonon dispersion curves and phonon density of states of wurtzite GaN.
Original language | English |
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Pages (from-to) | 493-495 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 219-220 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1996 Apr 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering