Optical phonons in GaN

T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura

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Abstract

We report on all optically active phonon frequencies of wurtzite GaN determined using Raman, infrared reflection, and attenuated total reflection spectra of a high quality GaN film of 2 μm thickness. We also show results of lattice dynamical calculations using a rigid ion model. Force constants and charge as fitting parameters were determined so as to reproduce all zone-center phonon frequencies and sound velocities for the high symmetry lines. We present phonon dispersion curves and phonon density of states of wurtzite GaN.

Original languageEnglish
Pages (from-to)493-495
Number of pages3
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - 1996 Apr 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Azuhata, T., Matsunaga, T., Shimada, K., Yoshida, K., Sota, T., Suzuki, K., & Nakamura, S. (1996). Optical phonons in GaN. Physica B: Condensed Matter, 219-220(1-4), 493-495. https://doi.org/10.1016/0921-4526(95)00789-X