Abstract
The effect of excitons in Al<inf>x</inf>Ga<inf>1-x</inf>As/GaAs superlattice solar cells has been investigated. We have shown that the superlattice active layers are effective to improve the solar cell performances because of the exciton enhanced photo-absorption. External quantum efficiency spectra show sharp and intense increase at the absorption edge due to excitonic absorption. This result indicates that excitonic photo-absorption can be stabilized at room temperature by using a superlattice structure. Optical properties of superlattice solar cells depend on the superlattice parameters because they determine the excitonic confinement effect, the tunneling effect and the sub-band structure. In this study, we compare external quantum efficiency for solar cells with different superlattice parameters to optimize the structure. The optimal barrier layer thickness is determined to be 1 nm for the Al<inf>0.5</inf>Ga<inf>0.5</inf>As/GaAs superlattice solar cell with 2-μm-thick active layer.
| Original language | English |
|---|---|
| Pages (from-to) | 333-336 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 425 |
| DOIs | |
| Publication status | Published - 2015 Jul 28 |
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Keywords
- A3. Molecular beam epitaxy
- A3. Superlattices
- B2. Semiconducting gallium arsenide
- B3. Solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
Optical properties of Al<inf>x</inf>Ga<inf>1-x</inf>As/GaAs superlattice solar cells. / Kuramoto, Makoto; Urabe, Hiroyuki; Nakano, Tomohiro; Kawaharazuka, Atsushi; Nishinaga, Jiro; Makimoto, Toshiki; Horikoshi, Yoshiji.
In: Journal of Crystal Growth, Vol. 425, 28.07.2015, p. 333-336.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical properties of AlxGa1-xAs/GaAs superlattice solar cells
AU - Kuramoto, Makoto
AU - Urabe, Hiroyuki
AU - Nakano, Tomohiro
AU - Kawaharazuka, Atsushi
AU - Nishinaga, Jiro
AU - Makimoto, Toshiki
AU - Horikoshi, Yoshiji
PY - 2015/7/28
Y1 - 2015/7/28
N2 - The effect of excitons in AlxGa1-xAs/GaAs superlattice solar cells has been investigated. We have shown that the superlattice active layers are effective to improve the solar cell performances because of the exciton enhanced photo-absorption. External quantum efficiency spectra show sharp and intense increase at the absorption edge due to excitonic absorption. This result indicates that excitonic photo-absorption can be stabilized at room temperature by using a superlattice structure. Optical properties of superlattice solar cells depend on the superlattice parameters because they determine the excitonic confinement effect, the tunneling effect and the sub-band structure. In this study, we compare external quantum efficiency for solar cells with different superlattice parameters to optimize the structure. The optimal barrier layer thickness is determined to be 1 nm for the Al0.5Ga0.5As/GaAs superlattice solar cell with 2-μm-thick active layer.
AB - The effect of excitons in AlxGa1-xAs/GaAs superlattice solar cells has been investigated. We have shown that the superlattice active layers are effective to improve the solar cell performances because of the exciton enhanced photo-absorption. External quantum efficiency spectra show sharp and intense increase at the absorption edge due to excitonic absorption. This result indicates that excitonic photo-absorption can be stabilized at room temperature by using a superlattice structure. Optical properties of superlattice solar cells depend on the superlattice parameters because they determine the excitonic confinement effect, the tunneling effect and the sub-band structure. In this study, we compare external quantum efficiency for solar cells with different superlattice parameters to optimize the structure. The optimal barrier layer thickness is determined to be 1 nm for the Al0.5Ga0.5As/GaAs superlattice solar cell with 2-μm-thick active layer.
KW - A3. Molecular beam epitaxy
KW - A3. Superlattices
KW - B2. Semiconducting gallium arsenide
KW - B3. Solar cells
UR - http://www.scopus.com/inward/record.url?scp=84938058404&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84938058404&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.03.024
DO - 10.1016/j.jcrysgro.2015.03.024
M3 - Article
AN - SCOPUS:84938058404
VL - 425
SP - 333
EP - 336
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -