Optical properties of amorphous and nanostructure Si/SiO2 quantum wells

Toshio Takeuchi; Minoru Kondo; Miki Fujuta; Atsushi Kawaharazuka; Yoshiji Horikoshi

doi:10.4028/www.scientific.net/JNanoR.26.59

Optical properties of amorphous and nanostructure Si/SiO₂ quantum wells

Toshio Takeuchi^*, Minoru Kondo, Miki Fujuta, Atsushi Kawaharazuka, Yoshiji Horikoshi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Amorphous Si/SiO₂ quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO ₂ layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E₀ = 1.61 + 0.75d^-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO₂ nanostructure layer are confirmed from optical transmittance and reflectance spectra.

Original language	English
Pages (from-to)	59-62
Number of pages	4
Journal	Journal of Nano Research
Volume	26
DOIs	https://doi.org/10.4028/www.scientific.net/JNanoR.26.59
Publication status	Published - 2014 Jan 6

Keywords

Amorphous silicon
Layer structure
Optical properties
Quantum confinement
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.4028/www.scientific.net/JNanoR.26.59

Cite this

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title = "Optical properties of amorphous and nanostructure Si/SiO2 quantum wells",

abstract = "Amorphous Si/SiO2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO 2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E0 = 1.61 + 0.75d-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.",

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AU - Takeuchi, Toshio

AU - Kondo, Minoru

AU - Fujuta, Miki

AU - Kawaharazuka, Atsushi

AU - Horikoshi, Yoshiji

PY - 2014/1/6

Y1 - 2014/1/6

N2 - Amorphous Si/SiO2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO 2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E0 = 1.61 + 0.75d-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.

AB - Amorphous Si/SiO2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO 2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E0 = 1.61 + 0.75d-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.

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KW - Layer structure

KW - Optical properties

KW - Quantum confinement

KW - X-ray photoelectron spectroscopy

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