Optical properties of amorphous and nanostructure Si/SiO2 quantum wells

Toshio Takeuchi*, Minoru Kondo, Miki Fujuta, Atsushi Kawaharazuka, Yoshiji Horikoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Amorphous Si/SiO2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO 2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E0 = 1.61 + 0.75d-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalJournal of Nano Research
Publication statusPublished - 2014 Jan 6


  • Amorphous silicon
  • Layer structure
  • Optical properties
  • Quantum confinement
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


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