Optical properties of amorphous and nanostructure Si/SiO2 quantum wells

Toshio Takeuchi, Minoru Kondo, Miki Fujuta, Atsushi Kawaharazuka, Yoshiji Horikoshi

Research output: Contribution to journalArticle

Abstract

Amorphous Si/SiO2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO 2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E0 = 1.61 + 0.75d-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalJournal of Nano Research
Volume26
DOIs
Publication statusPublished - 2014 Jan 6

Fingerprint

Opacity
Semiconductor quantum wells
Nanostructures
Optical properties
quantum wells
optical properties
Quantum confinement
Magnetron sputtering
transmittance
Wavelength
absorptivity
magnetron sputtering
reflectance
Temperature
room temperature
wavelengths
energy

Keywords

  • Amorphous silicon
  • Layer structure
  • Optical properties
  • Quantum confinement
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Optical properties of amorphous and nanostructure Si/SiO2 quantum wells. / Takeuchi, Toshio; Kondo, Minoru; Fujuta, Miki; Kawaharazuka, Atsushi; Horikoshi, Yoshiji.

In: Journal of Nano Research, Vol. 26, 06.01.2014, p. 59-62.

Research output: Contribution to journalArticle

Takeuchi, Toshio ; Kondo, Minoru ; Fujuta, Miki ; Kawaharazuka, Atsushi ; Horikoshi, Yoshiji. / Optical properties of amorphous and nanostructure Si/SiO2 quantum wells. In: Journal of Nano Research. 2014 ; Vol. 26. pp. 59-62.
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