Abstract
Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 38 |
| Issue number | 9 A/B |
| Publication status | Published - 1999 Sep 15 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Optical properties of an InGaN active layer in ultraviolet light emitting diode. / Deguchi, Takahiro; Torii, Kosuke; Shimada, Kazuhiro; Sota, Takayuki; Matsuo, Ryuji; Sugiyama, Mutsumi; Setoguchi, Akiko; Chichibu, Shigefusa; Nakamura, Shuji.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 9 A/B, 15.09.1999.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Optical properties of an InGaN active layer in ultraviolet light emitting diode
AU - Deguchi, Takahiro
AU - Torii, Kosuke
AU - Shimada, Kazuhiro
AU - Sota, Takayuki
AU - Matsuo, Ryuji
AU - Sugiyama, Mutsumi
AU - Setoguchi, Akiko
AU - Chichibu, Shigefusa
AU - Nakamura, Shuji
PY - 1999/9/15
Y1 - 1999/9/15
N2 - Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
AB - Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
UR - http://www.scopus.com/inward/record.url?scp=0033339218&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033339218&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033339218
VL - 38
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 A/B
ER -