Optical properties of an InGaN active layer in ultraviolet light emitting diode

Takahiro Deguchi, Kosuke Torii, Kazuhiro Shimada, Takayuki Sota, Ryuji Matsuo, Mutsumi Sugiyama, Akiko Setoguchi, Shigefusa Chichibu, Shuji Nakamura

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Abstract

Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

Original languageEnglish
Pages (from-to)L975-L977
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number9 A/B
Publication statusPublished - 1999 Sep 15

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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    Deguchi, T., Torii, K., Shimada, K., Sota, T., Matsuo, R., Sugiyama, M., Setoguchi, A., Chichibu, S., & Nakamura, S. (1999). Optical properties of an InGaN active layer in ultraviolet light emitting diode. Japanese Journal of Applied Physics, Part 2: Letters, 38(9 A/B), L975-L977.