Optical properties of an InGaN active layer in ultraviolet light emitting diode

Takahiro Deguchi, Kosuke Torii, Kazuhiro Shimada, Takayuki Sota, Ryuji Matsuo, Mutsumi Sugiyama, Akiko Setoguchi, Shigefusa Chichibu, Shuji Nakamura

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume38
    Issue number9 A/B
    Publication statusPublished - 1999 Sep 15

    Fingerprint

    Photoluminescence spectroscopy
    Electronic states
    ultraviolet radiation
    Light emitting diodes
    light emitting diodes
    Optical properties
    optical properties
    transmittance
    reflectance
    photoluminescence
    electronics
    spectroscopy
    Ultraviolet Rays

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Deguchi, T., Torii, K., Shimada, K., Sota, T., Matsuo, R., Sugiyama, M., ... Nakamura, S. (1999). Optical properties of an InGaN active layer in ultraviolet light emitting diode. Japanese Journal of Applied Physics, Part 2: Letters, 38(9 A/B).

    Optical properties of an InGaN active layer in ultraviolet light emitting diode. / Deguchi, Takahiro; Torii, Kosuke; Shimada, Kazuhiro; Sota, Takayuki; Matsuo, Ryuji; Sugiyama, Mutsumi; Setoguchi, Akiko; Chichibu, Shigefusa; Nakamura, Shuji.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 9 A/B, 15.09.1999.

    Research output: Contribution to journalArticle

    Deguchi, T, Torii, K, Shimada, K, Sota, T, Matsuo, R, Sugiyama, M, Setoguchi, A, Chichibu, S & Nakamura, S 1999, 'Optical properties of an InGaN active layer in ultraviolet light emitting diode', Japanese Journal of Applied Physics, Part 2: Letters, vol. 38, no. 9 A/B.
    Deguchi, Takahiro ; Torii, Kosuke ; Shimada, Kazuhiro ; Sota, Takayuki ; Matsuo, Ryuji ; Sugiyama, Mutsumi ; Setoguchi, Akiko ; Chichibu, Shigefusa ; Nakamura, Shuji. / Optical properties of an InGaN active layer in ultraviolet light emitting diode. In: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; Vol. 38, No. 9 A/B.
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    AU - Shimada, Kazuhiro

    AU - Sota, Takayuki

    AU - Matsuo, Ryuji

    AU - Sugiyama, Mutsumi

    AU - Setoguchi, Akiko

    AU - Chichibu, Shigefusa

    AU - Nakamura, Shuji

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