TY - JOUR
T1 - Optical properties of an InGaN active layer in ultraviolet light emitting diode
AU - Deguchi, Takahiro
AU - Torii, Kosuke
AU - Shimada, Kazuhiro
AU - Sota, Takayuki
AU - Matsuo, Ryuji
AU - Sugiyama, Mutsumi
AU - Setoguchi, Akiko
AU - Chichibu, Shigefusa
AU - Nakamura, Shuji
PY - 1999/9/15
Y1 - 1999/9/15
N2 - Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
AB - Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
UR - http://www.scopus.com/inward/record.url?scp=0033339218&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033339218&partnerID=8YFLogxK
U2 - 10.1143/jjap.38.l975
DO - 10.1143/jjap.38.l975
M3 - Article
AN - SCOPUS:0033339218
VL - 38
SP - L975-L977
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 A/B
ER -