Optical properties of an InGaN active layer in ultraviolet light emitting diode

Takahiro Deguchi; Kosuke Torii; Kazuhiro Shimada; Takayuki Sota; Ryuji Matsuo; Mutsumi Sugiyama; Akiko Setoguchi; Shigefusa Chichibu; Shuji Nakamura

Optical properties of an InGaN active layer in ultraviolet light emitting diode

Takahiro Deguchi, Kosuke Torii, Kazuhiro Shimada, Takayuki Sota, Ryuji Matsuo, Mutsumi Sugiyama, Akiko Setoguchi, Shigefusa Chichibu, Shuji Nakamura

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

Original language	English
Pages (from-to)	L975-L977
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	38
Issue number	9 A/B
Publication status	Published - 1999 Sep 15

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

Optical properties of an InGaN active layer in ultraviolet light emitting diode. / Deguchi, Takahiro; Torii, Kosuke; Shimada, Kazuhiro; Sota, Takayuki; Matsuo, Ryuji; Sugiyama, Mutsumi; Setoguchi, Akiko; Chichibu, Shigefusa; Nakamura, Shuji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 9 A/B, 15.09.1999, p. L975-L977.

Research output: Contribution to journal › Article › peer-review

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AU - Deguchi, Takahiro

AU - Torii, Kosuke

AU - Shimada, Kazuhiro

AU - Sota, Takayuki

AU - Matsuo, Ryuji

AU - Sugiyama, Mutsumi

AU - Setoguchi, Akiko

AU - Chichibu, Shigefusa

AU - Nakamura, Shuji

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N2 - Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

AB - Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

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SN - 0021-4922

IS - 9 A/B

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Optical properties of an InGaN active layer in ultraviolet light emitting diode

Abstract

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