Abstract
Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
| Original language | English |
|---|---|
| Pages (from-to) | L975-L977 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 38 |
| Issue number | 9 A/B |
| Publication status | Published - 1999 Sep 15 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Deguchi, T., Torii, K., Shimada, K., Sota, T., Matsuo, R., Sugiyama, M., Setoguchi, A., Chichibu, S., & Nakamura, S. (1999). Optical properties of an InGaN active layer in ultraviolet light emitting diode. Japanese Journal of Applied Physics, Part 2: Letters, 38(9 A/B), L975-L977.