Optical properties of InGaN quantum wells

S. F. Chichibu, A. C. Abare, M. P. Mack, M. S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. B. Fleischer, S. Keller, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, S. Nakamura

Research output: Contribution to journalConference article

143 Citations (Scopus)

Abstract

The emission mechanisms of strained InGaN quantum wells (QWs) were shown to vary depending on the well thickness L and InN molar fraction x. The QW resonance energy was shifted to lower energy by the quantum confined Stark effect (QCSE) due to the internal piezoelectric field, FPZ. The absorption spectrum was modulated by QCSE and quantum-confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of FPZ and L (potential drop across the well) exceeds the valence band discontinuity, ΔEV. In this case, dressed holes are confined in the triangular potential well formed at one side of the well. This produces apparent Stokes-like shift (vertical component). The QCFK further modulated the absorption energy for the wells with L greater than the three dimensional free exciton Bohr radius, aB. For the wells having high InN content (FPZ × L > ΔEV, ΔEC), electron and hole confined levels drop into the triangular potential wells formed at opposite sides of the wells, which reduces the wavefunction overlap. Doping of Si in the barriers partially screens FPZ resulting in a smaller Stokes-like shift, shorter recombination decay time, and higher emission efficiency. Si-doping was found to improve the interface quality and surface morphology, resulting in an efficient carrier transfer from high to low bandgap energy portions of the well. Effective in-plane localization of carriers in quantum disk size potential minima, which are produced by nonrandom alloy potential fluctuations enhanced by the large bowing parameter and FPZ, produces confined e-h pair whose wavefunctions are still overlapped. Their excitonic features are pronounced provided that L < aB and FPZ × L < EV (quantized exciton). Several cw laser wafers exhibit stimulated emission from these energy tail states even at room temperature.

Original languageEnglish
Pages (from-to)298-306
Number of pages9
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume59
Issue number1-3
DOIs
Publication statusPublished - 1999 May 6
EventProceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg
Duration: 1998 Jun 161998 Jun 19

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Chichibu, S. F., Abare, A. C., Mack, M. P., Minsky, M. S., Deguchi, T., Cohen, D., Kozodoy, P., Fleischer, S. B., Keller, S., Speck, J. S., Bowers, J. E., Hu, E., Mishra, U. K., Coldren, L. A., DenBaars, S. P., Wada, K., Sota, T., & Nakamura, S. (1999). Optical properties of InGaN quantum wells. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 59(1-3), 298-306. https://doi.org/10.1016/S0921-5107(98)00359-6