Optical properties of MBE-grown ZnTe epilayers

Gotthard Kudlek*, Nazmir Presser, Juergen Gutowski, David L. Mathine, Masakazu Kobayashi, Robert I. Gunshor

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


ZnTe is a promising material for optoelectronic devices because of its wide direct band gap in the green region of the spectrum. Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials, the authors investigated the influence of strain between layer and substrate, possible incorporation of impurities, electronic structure of the impurity-related exciton complexes, and biexciton recombination processes at high-density excitation.

Original languageEnglish
Pages (from-to)150-158
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue numberpt 1
Publication statusPublished - 1991 Jan 1
Externally publishedYes
EventPhysical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Aachen, Ger
Duration: 1990 Oct 281990 Nov 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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