Optical properties of MBE-grown ZnTe epilayers

Gotthard Kudlek, Nazmir Presser, Juergen Gutowski, David L. Mathine, Masakazu Kobayashi, Robert I. Gunshor

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

ZnTe is a promising material for optoelectronic devices because of its wide direct band gap in the green region of the spectrum. Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials, the authors investigated the influence of strain between layer and substrate, possible incorporation of impurities, electronic structure of the impurity-related exciton complexes, and biexciton recombination processes at high-density excitation.

Original languageEnglish
Pages (from-to)150-158
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1361
Issue numberpt 1
Publication statusPublished - 1991 Jan 1
EventPhysical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Aachen, Ger
Duration: 1990 Oct 281990 Nov 2

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kudlek, G., Presser, N., Gutowski, J., Mathine, D. L., Kobayashi, M., & Gunshor, R. I. (1991). Optical properties of MBE-grown ZnTe epilayers. Proceedings of SPIE - The International Society for Optical Engineering, 1361(pt 1), 150-158.