Optical properties of Si-, Ge- and Sn-doped GaN

A. Shikanai, H. Fukahori, Y. Kawakami, K. Hazu, Takayuki Sota, T. Mitani, T. Mukai, Sg Fujita

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    12 Citations (Scopus)

    Abstract

    Photoluminescence and reflectance spectra of Si-, Ge- and Sn-doped GaN epilayers grown on sapphire substrates at 10 K have been investigated, by which ionization energies on the Ga site were determined as 29, 30 and 33 meV, respectively. To investigate the coherent properties of excitons, the dephasing times of excitons in undoped and Si-doped GaN on sapphire substrates and freestanding GaN were measured using the degenerate four-wave mixing technique. The resulting homogeneous broadenings in undoped and Si-doped GaN on sapphire substrates were about twice as large as that in freestanding GaN, which indicates that defect-induced scattering is stronger in the former than in the latter.

    Original languageEnglish
    Title of host publicationPhysica Status Solidi Conferences
    EditorsMJ. Stutzmann
    Pages26-30
    Number of pages5
    Volume0
    Edition2
    Publication statusPublished - 2003
    EventProceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) - Warsaw
    Duration: 2002 Jul 242002 Jul 27

    Other

    OtherProceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10)
    CityWarsaw
    Period02/7/2402/7/27

    Fingerprint

    sapphire
    optical properties
    excitons
    four-wave mixing
    reflectance
    photoluminescence
    ionization
    defects
    scattering
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Shikanai, A., Fukahori, H., Kawakami, Y., Hazu, K., Sota, T., Mitani, T., ... Fujita, S. (2003). Optical properties of Si-, Ge- and Sn-doped GaN. In MJ. Stutzmann (Ed.), Physica Status Solidi Conferences (2 ed., Vol. 0, pp. 26-30)

    Optical properties of Si-, Ge- and Sn-doped GaN. / Shikanai, A.; Fukahori, H.; Kawakami, Y.; Hazu, K.; Sota, Takayuki; Mitani, T.; Mukai, T.; Fujita, Sg.

    Physica Status Solidi Conferences. ed. / MJ. Stutzmann. Vol. 0 2. ed. 2003. p. 26-30.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Shikanai, A, Fukahori, H, Kawakami, Y, Hazu, K, Sota, T, Mitani, T, Mukai, T & Fujita, S 2003, Optical properties of Si-, Ge- and Sn-doped GaN. in MJ Stutzmann (ed.), Physica Status Solidi Conferences. 2 edn, vol. 0, pp. 26-30, Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10), Warsaw, 02/7/24.
    Shikanai A, Fukahori H, Kawakami Y, Hazu K, Sota T, Mitani T et al. Optical properties of Si-, Ge- and Sn-doped GaN. In Stutzmann MJ, editor, Physica Status Solidi Conferences. 2 ed. Vol. 0. 2003. p. 26-30
    Shikanai, A. ; Fukahori, H. ; Kawakami, Y. ; Hazu, K. ; Sota, Takayuki ; Mitani, T. ; Mukai, T. ; Fujita, Sg. / Optical properties of Si-, Ge- and Sn-doped GaN. Physica Status Solidi Conferences. editor / MJ. Stutzmann. Vol. 0 2. ed. 2003. pp. 26-30
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