Optical response and electronic structure of Zn-doped MgAl 2O4

K. Izumi, Takashi Mizokawa, E. Hanamura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have studied the optical response and the electronic structure of Zn-doped Mg Al2 O4 using optical transmission, emission, and excitation spectroscopies, x-ray photoemission spectroscopy, and unrestricted Hartree-Fock calculation. Emission lines at 710, 650, and 470 nm observed in pure Mg Al2 O4 are related to the Mg vacancies and Mg-Al antisite defects. Interestingly, the intensities of these emission lines are enhanced by Zn doping. Unrestricted Hartree-Fock calculation for Zn-doped Mg Al2 O4 shows that in-gap impurity states are formed just above the valence-band maximum of Mg Al2 O4 when the Zn ion is substituted for the B-site Al ion. On the other hand, no in-gap state is formed when the Zn ion is substituted for the A -site Mg ion. The position of the Zn (3d) impurity level is identified by the photoemission measurement. The broad spectral features of the defect-induced states in pure Mg Al2 O4 is dramatically reduced by the Zn doping, indicating that holes supplied from the Zn ions at B site are trapped by the defect-induced states.

Original languageEnglish
Article number053109
JournalJournal of Applied Physics
Volume102
Issue number5
DOIs
Publication statusPublished - 2007
Externally publishedYes

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electronic structure
ions
photoelectric emission
antisite defects
impurities
defects
x ray spectroscopy
valence
spectroscopy
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Optical response and electronic structure of Zn-doped MgAl 2O4. / Izumi, K.; Mizokawa, Takashi; Hanamura, E.

In: Journal of Applied Physics, Vol. 102, No. 5, 053109, 2007.

Research output: Contribution to journalArticle

@article{a75cceb5a5174b7c82c71ee8a44df779,
title = "Optical response and electronic structure of Zn-doped MgAl 2O4",
abstract = "We have studied the optical response and the electronic structure of Zn-doped Mg Al2 O4 using optical transmission, emission, and excitation spectroscopies, x-ray photoemission spectroscopy, and unrestricted Hartree-Fock calculation. Emission lines at 710, 650, and 470 nm observed in pure Mg Al2 O4 are related to the Mg vacancies and Mg-Al antisite defects. Interestingly, the intensities of these emission lines are enhanced by Zn doping. Unrestricted Hartree-Fock calculation for Zn-doped Mg Al2 O4 shows that in-gap impurity states are formed just above the valence-band maximum of Mg Al2 O4 when the Zn ion is substituted for the B-site Al ion. On the other hand, no in-gap state is formed when the Zn ion is substituted for the A -site Mg ion. The position of the Zn (3d) impurity level is identified by the photoemission measurement. The broad spectral features of the defect-induced states in pure Mg Al2 O4 is dramatically reduced by the Zn doping, indicating that holes supplied from the Zn ions at B site are trapped by the defect-induced states.",
author = "K. Izumi and Takashi Mizokawa and E. Hanamura",
year = "2007",
doi = "10.1063/1.2777528",
language = "English",
volume = "102",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Optical response and electronic structure of Zn-doped MgAl 2O4

AU - Izumi, K.

AU - Mizokawa, Takashi

AU - Hanamura, E.

PY - 2007

Y1 - 2007

N2 - We have studied the optical response and the electronic structure of Zn-doped Mg Al2 O4 using optical transmission, emission, and excitation spectroscopies, x-ray photoemission spectroscopy, and unrestricted Hartree-Fock calculation. Emission lines at 710, 650, and 470 nm observed in pure Mg Al2 O4 are related to the Mg vacancies and Mg-Al antisite defects. Interestingly, the intensities of these emission lines are enhanced by Zn doping. Unrestricted Hartree-Fock calculation for Zn-doped Mg Al2 O4 shows that in-gap impurity states are formed just above the valence-band maximum of Mg Al2 O4 when the Zn ion is substituted for the B-site Al ion. On the other hand, no in-gap state is formed when the Zn ion is substituted for the A -site Mg ion. The position of the Zn (3d) impurity level is identified by the photoemission measurement. The broad spectral features of the defect-induced states in pure Mg Al2 O4 is dramatically reduced by the Zn doping, indicating that holes supplied from the Zn ions at B site are trapped by the defect-induced states.

AB - We have studied the optical response and the electronic structure of Zn-doped Mg Al2 O4 using optical transmission, emission, and excitation spectroscopies, x-ray photoemission spectroscopy, and unrestricted Hartree-Fock calculation. Emission lines at 710, 650, and 470 nm observed in pure Mg Al2 O4 are related to the Mg vacancies and Mg-Al antisite defects. Interestingly, the intensities of these emission lines are enhanced by Zn doping. Unrestricted Hartree-Fock calculation for Zn-doped Mg Al2 O4 shows that in-gap impurity states are formed just above the valence-band maximum of Mg Al2 O4 when the Zn ion is substituted for the B-site Al ion. On the other hand, no in-gap state is formed when the Zn ion is substituted for the A -site Mg ion. The position of the Zn (3d) impurity level is identified by the photoemission measurement. The broad spectral features of the defect-induced states in pure Mg Al2 O4 is dramatically reduced by the Zn doping, indicating that holes supplied from the Zn ions at B site are trapped by the defect-induced states.

UR - http://www.scopus.com/inward/record.url?scp=34548616963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548616963&partnerID=8YFLogxK

U2 - 10.1063/1.2777528

DO - 10.1063/1.2777528

M3 - Article

AN - SCOPUS:34548616963

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

M1 - 053109

ER -