Optical study of the accumulated charge in the amorphous InGaZnO 4 thin-film transistor

Akira Kato*, Yoshiaki Uesu, Takuro Katsufuji

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Thin-film transistors (TFTs) with amorphous InGaZnO 4 as a channel layer are known to exhibit high field-effect mobility. We studied the characteristic of the accumulated carriers in this TFT by optical spectroscopy and observed Drude absorption and oscillation in the transmittance spectrum of the channel region appearing with an applied gate voltage. The scattering rate of the carriers in the accumulation layers estimated from the optical spectrum is ℏ/τAL = 0: 19 eV, and this small value is the origin of the high mobility of the TFT with amorphous InGaZnO 4.

Original languageEnglish
Article number093706
Journaljournal of the physical society of japan
Issue number9
Publication statusPublished - 2009 Sep 1


  • Charge accumulation
  • Optical spectroscopy
  • Thin-film transistor

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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