Optically controlled S- and N-shaped negative differential resistances by R-TOPS

H. Sakata, Katsuyuki Utaka, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherIEEE
Pages524-527
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13

Other

OtherProceedings of the 7th International Conference on Indium Phosphide and Related Materials
CitySapporo, Jpn
Period95/5/995/5/13

Fingerprint

Resonant tunneling
resonant tunneling
Optoelectronic devices
switches
Switches
Phototransistors
phototransistors
Resonant tunneling diodes
resonant tunneling diodes
optical switching

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Sakata, H., Utaka, K., & Matsushima, Y. (1995). Optically controlled S- and N-shaped negative differential resistances by R-TOPS. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 524-527). IEEE.

Optically controlled S- and N-shaped negative differential resistances by R-TOPS. / Sakata, H.; Utaka, Katsuyuki; Matsushima, Yuichi.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1995. p. 524-527.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakata, H, Utaka, K & Matsushima, Y 1995, Optically controlled S- and N-shaped negative differential resistances by R-TOPS. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, pp. 524-527, Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, Sapporo, Jpn, 95/5/9.
Sakata H, Utaka K, Matsushima Y. Optically controlled S- and N-shaped negative differential resistances by R-TOPS. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE. 1995. p. 524-527
Sakata, H. ; Utaka, Katsuyuki ; Matsushima, Yuichi. / Optically controlled S- and N-shaped negative differential resistances by R-TOPS. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1995. pp. 524-527
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abstract = "Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.",
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