Optically controlled S- and N-shaped negative differential resistances by R-TOPS

H. Sakata, K. Utaka, Y. Matsushima

Research output: Contribution to journalConference article

Abstract

Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.

Original languageEnglish
Pages (from-to)524-527
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1995 Jan 1
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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