Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata, K. Utaka, Y. Matsushima

Research output: Contribution to journalArticle

Abstract

We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

Original languageEnglish
Pages (from-to)591-597
Number of pages7
JournalOptical and Quantum Electronics
Volume28
Issue number5
DOIs
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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