Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata, Katsuyuki Utaka, Yuichi Matsushima

    Research output: Contribution to journalArticle

    Abstract

    We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

    Original languageEnglish
    Pages (from-to)591-597
    Number of pages7
    JournalOptical and Quantum Electronics
    Volume28
    Issue number5
    Publication statusPublished - 1996

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    Resonant tunneling
    resonant tunneling
    Optoelectronic devices
    switches
    Switches
    latches
    optical switching
    Bias voltage
    electric potential

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics

    Cite this

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    abstract = "We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.",
    author = "H. Sakata and Katsuyuki Utaka and Yuichi Matsushima",
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    AU - Sakata, H.

    AU - Utaka, Katsuyuki

    AU - Matsushima, Yuichi

    PY - 1996

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    N2 - We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

    AB - We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

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