Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy

Yoshiharu Yamauchi, Toshiki Makimoto, Yoshiji Horikoshi

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Abstract

AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.

Original languageEnglish
Pages (from-to)L155-L158
JournalJapanese journal of applied physics
Volume28
Issue number2 A
DOIs
Publication statusPublished - 1989 Feb

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Keywords

  • Flow-rate modulation epitaxy
  • Migration
  • Photoluminescence
  • Quantum well

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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