TY - JOUR
T1 - Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy
AU - Yamauchi, Yoshiharu
AU - Makimoto, Toshiki
AU - Horikoshi, Yoshiji
PY - 1989/2
Y1 - 1989/2
N2 - AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.
AB - AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.
KW - Flow-rate modulation epitaxy
KW - Migration
KW - Photoluminescence
KW - Quantum well
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U2 - 10.1143/JJAP.28.L155
DO - 10.1143/JJAP.28.L155
M3 - Article
AN - SCOPUS:0024605911
SN - 0021-4922
VL - 28
SP - L155-L158
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2 A
ER -