Abstract
In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the ASME InterPack Conference 2009, IPACK2009 |
| Pages | 485-490 |
| Number of pages | 6 |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 2010 |
| Externally published | Yes |
| Event | 2009 ASME InterPack Conference, IPACK2009 - San Francisco, CA Duration: 2009 Jul 19 → 2009 Jul 23 |
Other
| Other | 2009 ASME InterPack Conference, IPACK2009 |
|---|---|
| City | San Francisco, CA |
| Period | 09/7/19 → 09/7/23 |
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ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Optimization of the tip of microwave AFM probe. / Ju, Yang; Hamada, Motohiro; Hosoi, Atsushi; Fujimoto, Akifumi.
Proceedings of the ASME InterPack Conference 2009, IPACK2009. Vol. 1 2010. p. 485-490.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Optimization of the tip of microwave AFM probe
AU - Ju, Yang
AU - Hamada, Motohiro
AU - Hosoi, Atsushi
AU - Fujimoto, Akifumi
PY - 2010
Y1 - 2010
N2 - In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.
AB - In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.
UR - http://www.scopus.com/inward/record.url?scp=77953743242&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953743242&partnerID=8YFLogxK
U2 - 10.1115/InterPACK2009-89252
DO - 10.1115/InterPACK2009-89252
M3 - Conference contribution
AN - SCOPUS:77953743242
SN - 9780791843598
VL - 1
SP - 485
EP - 490
BT - Proceedings of the ASME InterPack Conference 2009, IPACK2009
ER -