Optimization of the tip of microwave AFM probe

Yang Ju; Motohiro Hamada; Atsushi Hosoi; Akifumi Fujimoto

doi:10.1115/InterPACK2009-89252

Optimization of the tip of microwave AFM probe

Yang Ju, Motohiro Hamada, Atsushi Hosoi, Akifumi Fujimoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.

Original language	English
Title of host publication	Proceedings of the ASME InterPack Conference 2009, IPACK2009
Pages	485-490
Number of pages	6
DOIs	https://doi.org/10.1115/InterPACK2009-89252
Publication status	Published - 2010 Jun 25
Externally published	Yes
Event	2009 ASME InterPack Conference, IPACK2009 - San Francisco, CA, United States Duration: 2009 Jul 19 → 2009 Jul 23

Publication series

Name	Proceedings of the ASME InterPack Conference 2009, IPACK2009
Volume	1

Conference

Conference	2009 ASME InterPack Conference, IPACK2009
Country	United States
City	San Francisco, CA
Period	09/7/19 → 09/7/23

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1115/InterPACK2009-89252

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Ju, Y, Hamada, M, Hosoi, A & Fujimoto, A 2010, Optimization of the tip of microwave AFM probe. in Proceedings of the ASME InterPack Conference 2009, IPACK2009. Proceedings of the ASME InterPack Conference 2009, IPACK2009, vol. 1, pp. 485-490, 2009 ASME InterPack Conference, IPACK2009, San Francisco, CA, United States, 09/7/19. https://doi.org/10.1115/InterPACK2009-89252

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abstract = "In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.",

author = "Yang Ju and Motohiro Hamada and Atsushi Hosoi and Akifumi Fujimoto",

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N2 - In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.

AB - In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μ m high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250x30x15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.

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