Optimum voltage scaling methodology for low voltage operation of CHE type flash EEPROMs with high reliability, maintaining the constant performance

S. Ueno, H. Oda, N. Ajika, Masahide Inuishi, H. Miyoshi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The optimum voltage scaling method is presented to achieve the low voltage operation of Channel Hot Electron type flash EEPROMs with high reliability, maintaining the constant performance and the constant tunnel oxide thickness. In this rule, the maximum electric field reduces with the constant tunnel oxide thickness for suppressing the oxide reliability problems. Moreover the electric field at low level is fixed to keep the program and the erase time constant. Furthermore low voltage operation is achieved by increasing the coupling ratio and the p 0-pocket impurity concentration. This new rule is derived by clarifying the relation between the coupling ratio, the supply voltages and the sense levels from simple analytical equations. It is found that the flash performance is kept almost the same and the disturb characteristics is improved by following this methodology.

Original languageEnglish
Pages (from-to)54-55
Number of pages2
JournalUnknown Journal
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

low voltage
flash
methodology
scaling
Oxides
oxides
tunnels
Tunnels
Electric potential
electric potential
Electric fields
electric fields
Hot electrons
hot electrons
time constant
Impurities
impurities
Voltage scaling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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abstract = "The optimum voltage scaling method is presented to achieve the low voltage operation of Channel Hot Electron type flash EEPROMs with high reliability, maintaining the constant performance and the constant tunnel oxide thickness. In this rule, the maximum electric field reduces with the constant tunnel oxide thickness for suppressing the oxide reliability problems. Moreover the electric field at low level is fixed to keep the program and the erase time constant. Furthermore low voltage operation is achieved by increasing the coupling ratio and the p 0-pocket impurity concentration. This new rule is derived by clarifying the relation between the coupling ratio, the supply voltages and the sense levels from simple analytical equations. It is found that the flash performance is kept almost the same and the disturb characteristics is improved by following this methodology.",
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T1 - Optimum voltage scaling methodology for low voltage operation of CHE type flash EEPROMs with high reliability, maintaining the constant performance

AU - Ueno, S.

AU - Oda, H.

AU - Ajika, N.

AU - Inuishi, Masahide

AU - Miyoshi, H.

PY - 1996

Y1 - 1996

N2 - The optimum voltage scaling method is presented to achieve the low voltage operation of Channel Hot Electron type flash EEPROMs with high reliability, maintaining the constant performance and the constant tunnel oxide thickness. In this rule, the maximum electric field reduces with the constant tunnel oxide thickness for suppressing the oxide reliability problems. Moreover the electric field at low level is fixed to keep the program and the erase time constant. Furthermore low voltage operation is achieved by increasing the coupling ratio and the p 0-pocket impurity concentration. This new rule is derived by clarifying the relation between the coupling ratio, the supply voltages and the sense levels from simple analytical equations. It is found that the flash performance is kept almost the same and the disturb characteristics is improved by following this methodology.

AB - The optimum voltage scaling method is presented to achieve the low voltage operation of Channel Hot Electron type flash EEPROMs with high reliability, maintaining the constant performance and the constant tunnel oxide thickness. In this rule, the maximum electric field reduces with the constant tunnel oxide thickness for suppressing the oxide reliability problems. Moreover the electric field at low level is fixed to keep the program and the erase time constant. Furthermore low voltage operation is achieved by increasing the coupling ratio and the p 0-pocket impurity concentration. This new rule is derived by clarifying the relation between the coupling ratio, the supply voltages and the sense levels from simple analytical equations. It is found that the flash performance is kept almost the same and the disturb characteristics is improved by following this methodology.

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