Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch (S-TOPS)

H. Sakata, Y. Nagao, Yuichi Matsushima

Research output: Contribution to journalArticle

Abstract

Novel optoelectronic memory characteristics are successfully demonstrated by a symmetric triangular-barrier optoelectronic switch (S-TOPS), which consists of InGaAs. We confirm that stored data can be held for about 10 min without applied voltage. We can apply this device to an image memory or image processor in a two-dimensional form, which consumes very low holding energy.

Original languageEnglish
Pages (from-to)435-437
Number of pages3
JournalJournal of Optics A: Pure and Applied Optics
Volume1
Issue number4
DOIs
Publication statusPublished - 1999 Jul
Externally publishedYes

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Optoelectronic devices
switches
Switches
Data storage equipment
central processing units
Electric potential
electric potential
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch (S-TOPS). / Sakata, H.; Nagao, Y.; Matsushima, Yuichi.

In: Journal of Optics A: Pure and Applied Optics, Vol. 1, No. 4, 07.1999, p. 435-437.

Research output: Contribution to journalArticle

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