Recent progress in understanding the ordered structure in the thermal oxide layer on Si substrates is presented together with a brief review. Large-scale atomistic simulation of the silicon oxidation process shows that the ordered structure is due to residual order emanating from the (111) atomic planes in the original crystalline Si. By monitoring the X-ray diffraction peaks from the residual order, the diffusion process of atomic oxygen through the oxide layer as well as the dielectric breakdown mechanism caused by the electrical stress are investigated. The existence of the residual order is also confirmed in the interfacial SiO2 layer between a high-k gate insulator and the Si substrate.
|Number of pages||10|
|Publication status||Published - 2005|
|Event||5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: 2005 Oct 16 → 2005 Oct 20
ASJC Scopus subject areas