Ordered structure in the thermal oxide layer on silicon substrates

T. Shimura*, E. Mishima, H. Watanabe, K. Yasutake, M. Umeno, K. Tatsumura, T. Watanabe, I. Ohdomari, K. Yamada, S. Kamiyama, Y. Akasaka, Y. Nara, K. Nakamura

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Recent progress in understanding the ordered structure in the thermal oxide layer on Si substrates is presented together with a brief review. Large-scale atomistic simulation of the silicon oxidation process shows that the ordered structure is due to residual order emanating from the (111) atomic planes in the original crystalline Si. By monitoring the X-ray diffraction peaks from the residual order, the diffusion process of atomic oxygen through the oxide layer as well as the dielectric breakdown mechanism caused by the electrical stress are investigated. The existence of the residual order is also confirmed in the interfacial SiO2 layer between a high-k gate insulator and the Si substrate.

Original languageEnglish
Title of host publicationPhysics and Chemistry of SiO2 and the Si-SiO2 Interface-5
PublisherElectrochemical Society Inc.
Pages39-48
Number of pages10
Edition1
ISBN (Electronic)9781607685395
Publication statusPublished - 2006
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 20

Publication series

NameECS Transactions
Number1
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period05/10/1605/10/20

ASJC Scopus subject areas

  • Engineering(all)

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