Ordered structure in the thermal oxide layer on silicon substrates

T. Shimura, E. Mishima, H. Watanabe, K. Yasutake, M. Umeno, K. Tatsumura, Takanobu Watanabe, I. Ohdomari, K. Yamada, S. Kamiyama, Y. Akasaka, Y. Nara, K. Nakamura

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Recent progress in understanding the ordered structure in the thermal oxide layer on Si substrates is presented together with a brief review. Large-scale atomistic simulation of the silicon oxidation process shows that the ordered structure is due to residual order emanating from the (111) atomic planes in the original crystalline Si. By monitoring the X-ray diffraction peaks from the residual order, the diffusion process of atomic oxygen through the oxide layer as well as the dielectric breakdown mechanism caused by the electrical stress are investigated. The existence of the residual order is also confirmed in the interfacial SiO 2 layer between a high-k gate insulator and the Si substrate.

    Original languageEnglish
    Title of host publicationECS Transactions
    EditorsH.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol
    Pages39-48
    Number of pages10
    Volume1
    Edition1
    Publication statusPublished - 2005
    Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
    Duration: 2005 Oct 162005 Oct 20

    Other

    Other5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
    CountryUnited States
    CityLos Angeles, CA
    Period05/10/1605/10/20

    Fingerprint

    Silicon
    Oxides
    Substrates
    Electric breakdown
    Crystalline materials
    X ray diffraction
    Oxidation
    Oxygen
    Monitoring
    Hot Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Shimura, T., Mishima, E., Watanabe, H., Yasutake, K., Umeno, M., Tatsumura, K., ... Nakamura, K. (2005). Ordered structure in the thermal oxide layer on silicon substrates. In H. Z. Massoud, J. H. Stathis, T. Hattori, D. Misra, & I. Baumvol (Eds.), ECS Transactions (1 ed., Vol. 1, pp. 39-48)

    Ordered structure in the thermal oxide layer on silicon substrates. / Shimura, T.; Mishima, E.; Watanabe, H.; Yasutake, K.; Umeno, M.; Tatsumura, K.; Watanabe, Takanobu; Ohdomari, I.; Yamada, K.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Nakamura, K.

    ECS Transactions. ed. / H.Z. Massoud; J.H. Stathis; T. Hattori; D. Misra; I. Baumvol. Vol. 1 1. ed. 2005. p. 39-48.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Shimura, T, Mishima, E, Watanabe, H, Yasutake, K, Umeno, M, Tatsumura, K, Watanabe, T, Ohdomari, I, Yamada, K, Kamiyama, S, Akasaka, Y, Nara, Y & Nakamura, K 2005, Ordered structure in the thermal oxide layer on silicon substrates. in HZ Massoud, JH Stathis, T Hattori, D Misra & I Baumvol (eds), ECS Transactions. 1 edn, vol. 1, pp. 39-48, 5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.
    Shimura T, Mishima E, Watanabe H, Yasutake K, Umeno M, Tatsumura K et al. Ordered structure in the thermal oxide layer on silicon substrates. In Massoud HZ, Stathis JH, Hattori T, Misra D, Baumvol I, editors, ECS Transactions. 1 ed. Vol. 1. 2005. p. 39-48
    Shimura, T. ; Mishima, E. ; Watanabe, H. ; Yasutake, K. ; Umeno, M. ; Tatsumura, K. ; Watanabe, Takanobu ; Ohdomari, I. ; Yamada, K. ; Kamiyama, S. ; Akasaka, Y. ; Nara, Y. ; Nakamura, K. / Ordered structure in the thermal oxide layer on silicon substrates. ECS Transactions. editor / H.Z. Massoud ; J.H. Stathis ; T. Hattori ; D. Misra ; I. Baumvol. Vol. 1 1. ed. 2005. pp. 39-48
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