Organic field-effect-transistor-based memory with nylon 11 as gate dielectric

Heisuke Sakai, Hayato Isoda, Yukio Furukawa

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We present the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric. The transfer characteristics of the memory device showed large hysteresis. A large shift of 37 V in the transfer characteristics was obtained by the application of a writing bias to the gate dielectric. The drain current ratio of the on-state to off-state was ca. 100. The on-state of the memory device showed a clear memory characteristic.

Original languageEnglish
Article number040210
JournalJapanese journal of applied physics
Issue number4 PART 1
Publication statusPublished - 2012 Apr 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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