Organic field-effect-transistor-based memory with nylon 11 as gate dielectric

Heisuke Sakai, Hayato Isoda, Yukio Furukawa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We present the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric. The transfer characteristics of the memory device showed large hysteresis. A large shift of 37 V in the transfer characteristics was obtained by the application of a writing bias to the gate dielectric. The drain current ratio of the on-state to off-state was ca. 100. The on-state of the memory device showed a clear memory characteristic.

Original languageEnglish
Article number040210
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 1
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Organic field-effect-transistor-based memory with nylon 11 as gate dielectric'. Together they form a unique fingerprint.

  • Cite this