TY - JOUR
T1 - Organic field-effect-transistor-based memory with nylon 11 as gate dielectric
AU - Sakai, Heisuke
AU - Isoda, Hayato
AU - Furukawa, Yukio
PY - 2012/4/1
Y1 - 2012/4/1
N2 - We present the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric. The transfer characteristics of the memory device showed large hysteresis. A large shift of 37 V in the transfer characteristics was obtained by the application of a writing bias to the gate dielectric. The drain current ratio of the on-state to off-state was ca. 100. The on-state of the memory device showed a clear memory characteristic.
AB - We present the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric. The transfer characteristics of the memory device showed large hysteresis. A large shift of 37 V in the transfer characteristics was obtained by the application of a writing bias to the gate dielectric. The drain current ratio of the on-state to off-state was ca. 100. The on-state of the memory device showed a clear memory characteristic.
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U2 - 10.1143/JJAP.51.040210
DO - 10.1143/JJAP.51.040210
M3 - Article
AN - SCOPUS:84860430882
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 1
M1 - 040210
ER -