Abstract
We present the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric. The transfer characteristics of the memory device showed large hysteresis. A large shift of 37 V in the transfer characteristics was obtained by the application of a writing bias to the gate dielectric. The drain current ratio of the on-state to off-state was ca. 100. The on-state of the memory device showed a clear memory characteristic.
| Original language | English |
|---|---|
| Article number | 040210 |
| Journal | Japanese journal of applied physics |
| Volume | 51 |
| Issue number | 4 PART 1 |
| DOIs | |
| Publication status | Published - 2012 Apr 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Sakai, H., Isoda, H., & Furukawa, Y. (2012). Organic field-effect-transistor-based memory with nylon 11 as gate dielectric. Japanese journal of applied physics, 51(4 PART 1), [040210]. https://doi.org/10.1143/JJAP.51.040210