Organic single crystal transistors: Interface modification with SAMs and double gate structure

Yoshihiro Iwasa; Haruhiko Asanuma; Hidekazo Shimotani; Taishi Takenobu; Takao Nishikawa; Jun Takeya

doi:10.1080/15421400600698691

Organic single crystal transistors: Interface modification with SAMs and double gate structure

Yoshihiro Iwasa, Haruhiko Asanuma, Hidekazo Shimotani, Taishi Takenobu, Takao Nishikawa, Jun Takeya

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Effects of Interface modification on the organic single crystal transistors have been investigated using self-assembled monolayers and double gate configurations. Systematic carrier density control associated with the shift of V th was achieved by the polarized self-assembled monolayers fabricated in between the gate oxide and organic single crystals, and by the second gate electrode, which was fabricated on the other side of the primary gate electrode.

Original language	English
Pages (from-to)	277-285
Number of pages	9
Journal	Molecular Crystals and Liquid Crystals
Volume	455
Issue number	1
DOIs	https://doi.org/10.1080/15421400600698691
Publication status	Published - 2006 Oct 1
Externally published	Yes

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Keywords

Double gate FET
Interface doping
Organic single crystal transistor
Self-assembled monolayer

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Iwasa, Y., Asanuma, H., Shimotani, H., Takenobu, T., Nishikawa, T., & Takeya, J. (2006). Organic single crystal transistors: Interface modification with SAMs and double gate structure. Molecular Crystals and Liquid Crystals, 455(1), 277-285. https://doi.org/10.1080/15421400600698691

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Access to Document

10.1080/15421400600698691