Abstract
Effects of Interface modification on the organic single crystal transistors have been investigated using self-assembled monolayers and double gate configurations. Systematic carrier density control associated with the shift of V th was achieved by the polarized self-assembled monolayers fabricated in between the gate oxide and organic single crystals, and by the second gate electrode, which was fabricated on the other side of the primary gate electrode.
| Original language | English |
|---|---|
| Pages (from-to) | 277-285 |
| Number of pages | 9 |
| Journal | Molecular Crystals and Liquid Crystals |
| Volume | 455 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Oct 1 |
| Externally published | Yes |
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Keywords
- Double gate FET
- Interface doping
- Organic single crystal transistor
- Self-assembled monolayer
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Organic single crystal transistors : Interface modification with SAMs and double gate structure. / Iwasa, Yoshihiro; Asanuma, Haruhiko; Shimotani, Hidekazo; Takenobu, Taishi; Nishikawa, Takao; Takeya, Jun.
In: Molecular Crystals and Liquid Crystals, Vol. 455, No. 1, 01.10.2006, p. 277-285.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Organic single crystal transistors
T2 - Interface modification with SAMs and double gate structure
AU - Iwasa, Yoshihiro
AU - Asanuma, Haruhiko
AU - Shimotani, Hidekazo
AU - Takenobu, Taishi
AU - Nishikawa, Takao
AU - Takeya, Jun
PY - 2006/10/1
Y1 - 2006/10/1
N2 - Effects of Interface modification on the organic single crystal transistors have been investigated using self-assembled monolayers and double gate configurations. Systematic carrier density control associated with the shift of V th was achieved by the polarized self-assembled monolayers fabricated in between the gate oxide and organic single crystals, and by the second gate electrode, which was fabricated on the other side of the primary gate electrode.
AB - Effects of Interface modification on the organic single crystal transistors have been investigated using self-assembled monolayers and double gate configurations. Systematic carrier density control associated with the shift of V th was achieved by the polarized self-assembled monolayers fabricated in between the gate oxide and organic single crystals, and by the second gate electrode, which was fabricated on the other side of the primary gate electrode.
KW - Double gate FET
KW - Interface doping
KW - Organic single crystal transistor
KW - Self-assembled monolayer
UR - http://www.scopus.com/inward/record.url?scp=33747589255&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747589255&partnerID=8YFLogxK
U2 - 10.1080/15421400600698691
DO - 10.1080/15421400600698691
M3 - Article
AN - SCOPUS:33747589255
VL - 455
SP - 277
EP - 285
JO - Molecular Crystals and Liquid Crystals
JF - Molecular Crystals and Liquid Crystals
SN - 1542-1406
IS - 1
ER -