Orientation controlled deposition of Pb(Zr,Ti)O3 films using a micron-size patterned SrRuO3 buffer layer

Ken Nishida, Takashi Yamamoto, Minoru Osada, Osami Sakata, Shigeru Kimura, Keisuke Saito, Masamichi Nishide, Takashi Katoda, Shintaro Yokoyama, Hiroshi Funakubo

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2 Citations (Scopus)

Abstract

Orientation controlled, micron-sized dot-patterned PZT films were grown by metal organic chemical vapor phase deposition (MOCVD), and their crystal structure was evaluated. A micron-size dot-patterned SrRuO3 (SRO) buffer layer was initially prepared by MOCVD through a metal mask on the (111) Pt/Ti/SiO2/Si substrate. Then, a PZT film was deposited over the entire substrate. Micron-beam X-ray diffraction and Raman spectroscopy indicated that (111)-orientated PZT was prepared on the SRO covered area, while the (100)/(001)-orientated one was directly grown on Pt-covered substrates. The PZT film grown on SRO was thinner than that on the Pt-covered substrate. The estimated ferroelectric property on the center of the dot pattern was larger than that at the circumference by Raman spectroscopy because the strain is accelerated at the center of the dot.

Original languageEnglish
Pages (from-to)5339-5344
Number of pages6
JournalJournal of Materials Science
Volume44
Issue number19
DOIs
Publication statusPublished - 2009 Oct
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishida, K., Yamamoto, T., Osada, M., Sakata, O., Kimura, S., Saito, K., Nishide, M., Katoda, T., Yokoyama, S., & Funakubo, H. (2009). Orientation controlled deposition of Pb(Zr,Ti)O3 films using a micron-size patterned SrRuO3 buffer layer. Journal of Materials Science, 44(19), 5339-5344. https://doi.org/10.1007/s10853-009-3683-5