Origin of carrier scattering in polycrystalline Al-doped ZnO films

Junjun Jia, Nobuto Oka, Minehide Kusayanagi, Satoshi Nakatomi, Yuzo Shigesato

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 × 1019 to 1.1 × 1021 cm-3. A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 × 1020 cm-3. A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of >4.0 × 1020 cm-3. The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level.

Original languageEnglish
Article number105802
JournalApplied Physics Express
Volume7
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Origin of carrier scattering in polycrystalline Al-doped ZnO films'. Together they form a unique fingerprint.

  • Cite this