Origin of colossal dielectric response of Ca Cu3 Ti4 O12 studied by using CaTi O3 Ca Cu3 Ti4 O12 CaTi O3 multilayer thin films

Masakazu Mitsugi, Shutaro Asanuma, Yoshiaki Uesu, Mamoru Fukunaga, Wataru Kobayashi, Ichiro Terasaki

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    To elucidate the origin of the colossal dielectric response (CDR) of Ca Cu3 Ti4 O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTi O3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

    Original languageEnglish
    Article number242904
    JournalApplied Physics Letters
    Volume90
    Issue number24
    DOIs
    Publication statusPublished - 2007

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    capacitance
    barrier layers
    thin films
    pulsed laser deposition
    capacitors
    permittivity

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Origin of colossal dielectric response of Ca Cu3 Ti4 O12 studied by using CaTi O3 Ca Cu3 Ti4 O12 CaTi O3 multilayer thin films. / Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro.

    In: Applied Physics Letters, Vol. 90, No. 24, 242904, 2007.

    Research output: Contribution to journalArticle

    Mitsugi, Masakazu ; Asanuma, Shutaro ; Uesu, Yoshiaki ; Fukunaga, Mamoru ; Kobayashi, Wataru ; Terasaki, Ichiro. / Origin of colossal dielectric response of Ca Cu3 Ti4 O12 studied by using CaTi O3 Ca Cu3 Ti4 O12 CaTi O3 multilayer thin films. In: Applied Physics Letters. 2007 ; Vol. 90, No. 24.
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    abstract = "To elucidate the origin of the colossal dielectric response (CDR) of Ca Cu3 Ti4 O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTi O3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.",
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    AU - Asanuma, Shutaro

    AU - Uesu, Yoshiaki

    AU - Fukunaga, Mamoru

    AU - Kobayashi, Wataru

    AU - Terasaki, Ichiro

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