Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Benjamin A. Haskell, Arpan Chakraborty, Takahiro Koyama, Paul T. Fini, Stacia Keller, Steven P. Denbaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Shigeo Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, Takayuki Sota

    Research output: Contribution to journalArticle

    518 Citations (Scopus)

    Abstract

    GaN and relate (Al, In, Ga)N alloys can produce blue- and green-light-emitting-diodes (LEDs) for full color displays and signals although they contain a high density of structural defects such as threading dislocations (TDs) and stacking faults. Both Quantum Wells (QW) and three-dimensional (3D) bulk films of InGaN exhibit high emission efficiency due to the recombination of excitons localized at certain potential minima originating from InN-rich lower bandgap regions. Hole function localization was predicted to be centered around In atoms in dilute cubic InGaN, using large-scale atomistic empirical pseudopotential calculations. Defect-insensitive nature of NBE emission probability in bulk films of In-containing InGaN, AlInN and AlInGaN was explained. The use of atomically inhomogeneous crystals alloyed or doped with exotic atoms for future innovations in efficient light emitters even when using defective crystals was proposed was proposed.

    Original languageEnglish
    Pages (from-to)810-816
    Number of pages7
    JournalNature Materials
    Volume5
    Issue number10
    DOIs
    Publication statusPublished - 2006 Oct 5

    Fingerprint

    Semiconductor materials
    Atoms
    Defects
    Crystals
    defects
    Stacking faults
    Dislocations (crystals)
    Excitons
    crystal defects
    Semiconductor quantum wells
    pseudopotentials
    crystals
    Light emitting diodes
    atoms
    emitters
    Energy gap
    light emitting diodes
    Innovation
    Display devices
    excitons

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Chichibu, S. F., Uedono, A., Onuma, T., Haskell, B. A., Chakraborty, A., Koyama, T., ... Sota, T. (2006). Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials, 5(10), 810-816. https://doi.org/10.1038/nmat1726

    Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. / Chichibu, Shigefusa F.; Uedono, Akira; Onuma, Takeyoshi; Haskell, Benjamin A.; Chakraborty, Arpan; Koyama, Takahiro; Fini, Paul T.; Keller, Stacia; Denbaars, Steven P.; Speck, James S.; Mishra, Umesh K.; Nakamura, Shuji; Yamaguchi, Shigeo; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Han, Jung; Sota, Takayuki.

    In: Nature Materials, Vol. 5, No. 10, 05.10.2006, p. 810-816.

    Research output: Contribution to journalArticle

    Chichibu, SF, Uedono, A, Onuma, T, Haskell, BA, Chakraborty, A, Koyama, T, Fini, PT, Keller, S, Denbaars, SP, Speck, JS, Mishra, UK, Nakamura, S, Yamaguchi, S, Kamiyama, S, Amano, H, Akasaki, I, Han, J & Sota, T 2006, 'Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors', Nature Materials, vol. 5, no. 10, pp. 810-816. https://doi.org/10.1038/nmat1726
    Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 2006 Oct 5;5(10):810-816. https://doi.org/10.1038/nmat1726
    Chichibu, Shigefusa F. ; Uedono, Akira ; Onuma, Takeyoshi ; Haskell, Benjamin A. ; Chakraborty, Arpan ; Koyama, Takahiro ; Fini, Paul T. ; Keller, Stacia ; Denbaars, Steven P. ; Speck, James S. ; Mishra, Umesh K. ; Nakamura, Shuji ; Yamaguchi, Shigeo ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Han, Jung ; Sota, Takayuki. / Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. In: Nature Materials. 2006 ; Vol. 5, No. 10. pp. 810-816.
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