Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, Takayuki Sota

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    A principal origin of the defect-insensitive emission probability of In-containing three-dimensional (3-D) bulk (Al,In,Ga)N alloy films, such as InGaN, AlInN and AlInGaN, is proposed. In contrast to In-free GaN or AlGaN, In-containing films grown on sapphire substrates show significant emission probabilities, although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional (Al,In,Ga)(As,P) light-emitting-diode films. According to the extremely short diffusion lengths of positrons (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that capturing of holes by localized valence states associated with atomic condensates of In-N outrun the trapping by non-radiative recombination centres, which are defect complexes associated with group III vacancies, because holes and positrons have the same positive charge. The captured holes are considered to form localized excitons with surrounding electrons to emit the light. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.

    Original languageEnglish
    Pages (from-to)2019-2039
    Number of pages21
    JournalPhilosophical Magazine
    Volume87
    Issue number13
    DOIs
    Publication statusPublished - 2007

    Fingerprint

    positron annihilation
    excitons
    photoluminescence
    positrons
    defects
    radiative lifetime
    diffusion length
    crystals
    condensates
    emitters
    sapphire
    light emitting diodes
    trapping
    valence
    Bulk
    Three-dimensional
    Hole
    Annihilation
    electrons
    Defects

    ASJC Scopus subject areas

    • Philosophy

    Cite this

    Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques. / Chichibu, S. F.; Uedono, A.; Onuma, T.; Haskell, B. A.; Chakraborty, A.; Koyama, T.; Fini, P. T.; Keller, S.; Denbaars, S. P.; Speck, J. S.; Mishra, U. K.; Nakamura, S.; Yamaguchi, S.; Kamiyama, S.; Amano, H.; Akasaki, I.; Han, J.; Sota, Takayuki.

    In: Philosophical Magazine, Vol. 87, No. 13, 2007, p. 2019-2039.

    Research output: Contribution to journalArticle

    Chichibu, SF, Uedono, A, Onuma, T, Haskell, BA, Chakraborty, A, Koyama, T, Fini, PT, Keller, S, Denbaars, SP, Speck, JS, Mishra, UK, Nakamura, S, Yamaguchi, S, Kamiyama, S, Amano, H, Akasaki, I, Han, J & Sota, T 2007, 'Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques', Philosophical Magazine, vol. 87, no. 13, pp. 2019-2039. https://doi.org/10.1080/14786430701241689
    Chichibu, S. F. ; Uedono, A. ; Onuma, T. ; Haskell, B. A. ; Chakraborty, A. ; Koyama, T. ; Fini, P. T. ; Keller, S. ; Denbaars, S. P. ; Speck, J. S. ; Mishra, U. K. ; Nakamura, S. ; Yamaguchi, S. ; Kamiyama, S. ; Amano, H. ; Akasaki, I. ; Han, J. ; Sota, Takayuki. / Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques. In: Philosophical Magazine. 2007 ; Vol. 87, No. 13. pp. 2019-2039.
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    abstract = "A principal origin of the defect-insensitive emission probability of In-containing three-dimensional (3-D) bulk (Al,In,Ga)N alloy films, such as InGaN, AlInN and AlInGaN, is proposed. In contrast to In-free GaN or AlGaN, In-containing films grown on sapphire substrates show significant emission probabilities, although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional (Al,In,Ga)(As,P) light-emitting-diode films. According to the extremely short diffusion lengths of positrons (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that capturing of holes by localized valence states associated with atomic condensates of In-N outrun the trapping by non-radiative recombination centres, which are defect complexes associated with group III vacancies, because holes and positrons have the same positive charge. The captured holes are considered to form localized excitons with surrounding electrons to emit the light. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.",
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    AU - Chichibu, S. F.

    AU - Uedono, A.

    AU - Onuma, T.

    AU - Haskell, B. A.

    AU - Chakraborty, A.

    AU - Koyama, T.

    AU - Fini, P. T.

    AU - Keller, S.

    AU - Denbaars, S. P.

    AU - Speck, J. S.

    AU - Mishra, U. K.

    AU - Nakamura, S.

    AU - Yamaguchi, S.

    AU - Kamiyama, S.

    AU - Amano, H.

    AU - Akasaki, I.

    AU - Han, J.

    AU - Sota, Takayuki

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    N2 - A principal origin of the defect-insensitive emission probability of In-containing three-dimensional (3-D) bulk (Al,In,Ga)N alloy films, such as InGaN, AlInN and AlInGaN, is proposed. In contrast to In-free GaN or AlGaN, In-containing films grown on sapphire substrates show significant emission probabilities, although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional (Al,In,Ga)(As,P) light-emitting-diode films. According to the extremely short diffusion lengths of positrons (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that capturing of holes by localized valence states associated with atomic condensates of In-N outrun the trapping by non-radiative recombination centres, which are defect complexes associated with group III vacancies, because holes and positrons have the same positive charge. The captured holes are considered to form localized excitons with surrounding electrons to emit the light. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.

    AB - A principal origin of the defect-insensitive emission probability of In-containing three-dimensional (3-D) bulk (Al,In,Ga)N alloy films, such as InGaN, AlInN and AlInGaN, is proposed. In contrast to In-free GaN or AlGaN, In-containing films grown on sapphire substrates show significant emission probabilities, although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional (Al,In,Ga)(As,P) light-emitting-diode films. According to the extremely short diffusion lengths of positrons (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that capturing of holes by localized valence states associated with atomic condensates of In-N outrun the trapping by non-radiative recombination centres, which are defect complexes associated with group III vacancies, because holes and positrons have the same positive charge. The captured holes are considered to form localized excitons with surrounding electrons to emit the light. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.

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