Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE

Toshiki Makimoto, Hisao Saito, Naoki Kobayashi

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Nitrogen atomic-layer-doping and nitrogen uniform doping were performed on (001) GaAs by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen doping source. Nitrogen doped GaAs layers showed several sharp photoluminescence lines relating to excitons bound to nitrogen pairs at 8 K. We investigated the origins of these sharp photoluminescence lines, that is, the distance between the nitrogen atoms of a pair and their pairing direction. The photoluminescence spectra for nitrogen atomic-layer-doped GaAs are different from those for uniformly nitrogen-doped GaAs, as expected from the different dimensions of the nitrogen atom distribution. To estimate the distance between the nitrogen atoms of a pair and their pairing direction, we performed double atomic-layer doping and varied the distance between the two atomic-layer-doped planes. When the two planes are brought to 1 nm of each other, lines observed only in uniformly doped GaAs appear. From this result, it was determined that the pairing directions corresponding to these lines are not included in the (001) plane and the corresponding distance between the nitrogen atoms of a pair is around 1 nm.

Original languageEnglish
Pages (from-to)1694-1697
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number3 SUPPL. B
Publication statusPublished - 1997 Mar
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Luminescence
Doping (additives)
luminescence
Nitrogen
nitrogen
nitrogen atoms
photoluminescence
Atoms
Photoluminescence
dimethylhydrazines
vapor phase epitaxy
excitons
Excitons
estimates

Keywords

  • δ-doping
  • (001)
  • Atomic-layer doping
  • Dimethylhydrazine
  • GaAs
  • Isoelectronic traps
  • MOVPE
  • N pair
  • Photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE. / Makimoto, Toshiki; Saito, Hisao; Kobayashi, Naoki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 3 SUPPL. B, 03.1997, p. 1694-1697.

Research output: Contribution to journalArticle

@article{66093b07c3e14464abcc772876b5c51c,
title = "Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE",
abstract = "Nitrogen atomic-layer-doping and nitrogen uniform doping were performed on (001) GaAs by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen doping source. Nitrogen doped GaAs layers showed several sharp photoluminescence lines relating to excitons bound to nitrogen pairs at 8 K. We investigated the origins of these sharp photoluminescence lines, that is, the distance between the nitrogen atoms of a pair and their pairing direction. The photoluminescence spectra for nitrogen atomic-layer-doped GaAs are different from those for uniformly nitrogen-doped GaAs, as expected from the different dimensions of the nitrogen atom distribution. To estimate the distance between the nitrogen atoms of a pair and their pairing direction, we performed double atomic-layer doping and varied the distance between the two atomic-layer-doped planes. When the two planes are brought to 1 nm of each other, lines observed only in uniformly doped GaAs appear. From this result, it was determined that the pairing directions corresponding to these lines are not included in the (001) plane and the corresponding distance between the nitrogen atoms of a pair is around 1 nm.",
keywords = "δ-doping, (001), Atomic-layer doping, Dimethylhydrazine, GaAs, Isoelectronic traps, MOVPE, N pair, Photoluminescence",
author = "Toshiki Makimoto and Hisao Saito and Naoki Kobayashi",
year = "1997",
month = "3",
language = "English",
volume = "36",
pages = "1694--1697",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3 SUPPL. B",

}

TY - JOUR

T1 - Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE

AU - Makimoto, Toshiki

AU - Saito, Hisao

AU - Kobayashi, Naoki

PY - 1997/3

Y1 - 1997/3

N2 - Nitrogen atomic-layer-doping and nitrogen uniform doping were performed on (001) GaAs by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen doping source. Nitrogen doped GaAs layers showed several sharp photoluminescence lines relating to excitons bound to nitrogen pairs at 8 K. We investigated the origins of these sharp photoluminescence lines, that is, the distance between the nitrogen atoms of a pair and their pairing direction. The photoluminescence spectra for nitrogen atomic-layer-doped GaAs are different from those for uniformly nitrogen-doped GaAs, as expected from the different dimensions of the nitrogen atom distribution. To estimate the distance between the nitrogen atoms of a pair and their pairing direction, we performed double atomic-layer doping and varied the distance between the two atomic-layer-doped planes. When the two planes are brought to 1 nm of each other, lines observed only in uniformly doped GaAs appear. From this result, it was determined that the pairing directions corresponding to these lines are not included in the (001) plane and the corresponding distance between the nitrogen atoms of a pair is around 1 nm.

AB - Nitrogen atomic-layer-doping and nitrogen uniform doping were performed on (001) GaAs by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen doping source. Nitrogen doped GaAs layers showed several sharp photoluminescence lines relating to excitons bound to nitrogen pairs at 8 K. We investigated the origins of these sharp photoluminescence lines, that is, the distance between the nitrogen atoms of a pair and their pairing direction. The photoluminescence spectra for nitrogen atomic-layer-doped GaAs are different from those for uniformly nitrogen-doped GaAs, as expected from the different dimensions of the nitrogen atom distribution. To estimate the distance between the nitrogen atoms of a pair and their pairing direction, we performed double atomic-layer doping and varied the distance between the two atomic-layer-doped planes. When the two planes are brought to 1 nm of each other, lines observed only in uniformly doped GaAs appear. From this result, it was determined that the pairing directions corresponding to these lines are not included in the (001) plane and the corresponding distance between the nitrogen atoms of a pair is around 1 nm.

KW - δ-doping

KW - (001)

KW - Atomic-layer doping

KW - Dimethylhydrazine

KW - GaAs

KW - Isoelectronic traps

KW - MOVPE

KW - N pair

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0000779035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000779035&partnerID=8YFLogxK

M3 - Article

VL - 36

SP - 1694

EP - 1697

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 SUPPL. B

ER -