Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

Takashi Noma, Kwang Soo Seol, Hiromitsu Kato, Makoto Fujimaki, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    32 Citations (Scopus)

    Abstract

    A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.

    Original languageEnglish
    Pages (from-to)1995-1997
    Number of pages3
    JournalApplied Physics Letters
    Volume79
    Issue number13
    DOIs
    Publication statusPublished - 2001 Sep 24

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    oxynitrides
    photoluminescence
    silicon
    nitriding
    silicon nitrides
    emission spectra
    silicon dioxide
    nitrogen
    decay
    hydrogen
    profiles
    excitation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride. / Noma, Takashi; Seol, Kwang Soo; Kato, Hiromitsu; Fujimaki, Makoto; Ohki, Yoshimichi.

    In: Applied Physics Letters, Vol. 79, No. 13, 24.09.2001, p. 1995-1997.

    Research output: Contribution to journalArticle

    Noma, Takashi ; Seol, Kwang Soo ; Kato, Hiromitsu ; Fujimaki, Makoto ; Ohki, Yoshimichi. / Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride. In: Applied Physics Letters. 2001 ; Vol. 79, No. 13. pp. 1995-1997.
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    AU - Ohki, Yoshimichi

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