Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

Takashi Noma, Kwang Soo Seol, Hiromitsu Kato, Makoto Fujimaki, Yoshimichi Ohki

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.

Original languageEnglish
Pages (from-to)1995-1997
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number13
DOIs
Publication statusPublished - 2001 Sep 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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