Origin of the tilt of crystalline axis influenced by the N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs

H. Hayashi, A. Hayashida, A. W. Jia, Masakazu Kobayashi, M. Shimotomai, Y. Kato, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

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Abstract

We found that the direction of the [001] axis of the c-GaN epilayer grown on (001) GaAs was slightly tilted towards the direction of the N-beam during the epitaxial growth by rf-MBE, where the N-beam was incident obliquely to the surface normal. When the tilt of the c-GaN [001] axis was observed, the typical X-ray rocking FWHM value for (002) c-GaN was about 60 arcmin. This indicates that the large mosaicity is related to the tilt of the c-GaN [001] axis. Because the tilt is easily observed for the c-GaN epilayers grown at high growth rate, this implies that the large amount of N species on the growing surface is the origin of the tilt of c-GaN [001] axis. As for the inclusion of the h-GaN phase domain, we found that the peak shifts for the (1011) h-GaN planes occurred in accordance with the peak shift of (002) c-GaN in reciprocal space mappings.

Original languageEnglish
Pages (from-to)241-245
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
Publication statusPublished - 1999 Nov
Externally publishedYes

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Epilayers
Molecular beam epitaxy
incidence
Crystalline materials
Full width at half maximum
Epitaxial growth
X rays
shift
inclusions
Direction compound
gallium arsenide
x rays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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Origin of the tilt of crystalline axis influenced by the N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs. / Hayashi, H.; Hayashida, A.; Jia, A. W.; Kobayashi, Masakazu; Shimotomai, M.; Kato, Y.; Yoshikawa, A.; Takahashi, K.

In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 11.1999, p. 241-245.

Research output: Contribution to journalArticle

Hayashi, H, Hayashida, A, Jia, AW, Kobayashi, M, Shimotomai, M, Kato, Y, Yoshikawa, A & Takahashi, K 1999, 'Origin of the tilt of crystalline axis influenced by the N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs', Physica Status Solidi (B) Basic Research, vol. 216, no. 1, pp. 241-245.
Hayashi, H. ; Hayashida, A. ; Jia, A. W. ; Kobayashi, Masakazu ; Shimotomai, M. ; Kato, Y. ; Yoshikawa, A. ; Takahashi, K. / Origin of the tilt of crystalline axis influenced by the N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs. In: Physica Status Solidi (B) Basic Research. 1999 ; Vol. 216, No. 1. pp. 241-245.
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AU - Hayashi, H.

AU - Hayashida, A.

AU - Jia, A. W.

AU - Kobayashi, Masakazu

AU - Shimotomai, M.

AU - Kato, Y.

AU - Yoshikawa, A.

AU - Takahashi, K.

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N2 - We found that the direction of the [001] axis of the c-GaN epilayer grown on (001) GaAs was slightly tilted towards the direction of the N-beam during the epitaxial growth by rf-MBE, where the N-beam was incident obliquely to the surface normal. When the tilt of the c-GaN [001] axis was observed, the typical X-ray rocking FWHM value for (002) c-GaN was about 60 arcmin. This indicates that the large mosaicity is related to the tilt of the c-GaN [001] axis. Because the tilt is easily observed for the c-GaN epilayers grown at high growth rate, this implies that the large amount of N species on the growing surface is the origin of the tilt of c-GaN [001] axis. As for the inclusion of the h-GaN phase domain, we found that the peak shifts for the (1011) h-GaN planes occurred in accordance with the peak shift of (002) c-GaN in reciprocal space mappings.

AB - We found that the direction of the [001] axis of the c-GaN epilayer grown on (001) GaAs was slightly tilted towards the direction of the N-beam during the epitaxial growth by rf-MBE, where the N-beam was incident obliquely to the surface normal. When the tilt of the c-GaN [001] axis was observed, the typical X-ray rocking FWHM value for (002) c-GaN was about 60 arcmin. This indicates that the large mosaicity is related to the tilt of the c-GaN [001] axis. Because the tilt is easily observed for the c-GaN epilayers grown at high growth rate, this implies that the large amount of N species on the growing surface is the origin of the tilt of c-GaN [001] axis. As for the inclusion of the h-GaN phase domain, we found that the peak shifts for the (1011) h-GaN planes occurred in accordance with the peak shift of (002) c-GaN in reciprocal space mappings.

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