Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

Ken Kudara*, Masakazu Arai, Yukiko Suzuki, Aoi Morishita, Jun Tsunoda, Atsushi Hiraiwa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reports the direct current and radio frequency characteristics of two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with microwave-plasma-chemical-vapor-deposition regrown P++-diamond (B ≈ 1 × 1022 cm−3) layers as their source and drain regions. To evaluate the ohmic contact resistance, two patterns of transmission line method were fabricated—one with P++-diamond/2DHG diamond interfaces and the other with only the P++-diamond layer. Three resistance components (metal/P++-diamond contact resistance (0.39 Ωmm), P++-diamond access resistance, and P++-diamond/2DHG contact resistance (∼0.65 Ω mm) were evaluated for the first time. The introduction of the P++-diamond ohmic contacts generated a drain current density of 1 A/mm and an output power density of 3.6 W/mm at a quiescent drain voltage (VDS, Q) of −50 V at 1 GHz; an output power of 1.7 W was achieved at a VDS, Q of −40 V at 1 GHz with a 1 mm gate width. These values were obtained in 2DHG diamond MOSFETs with a regrown P++-diamond layer with 1 μ m gate length. These results indicate that regrown P++-diamond has the potential to improve the drain current density and output power density of 2DHG diamond field-effect transistors.

Original languageEnglish
Pages (from-to)220-228
Number of pages9
JournalCarbon
Volume188
DOIs
Publication statusPublished - 2022 Mar

Keywords

  • Diamond FETs
  • High drain current density
  • Output power
  • Radio-frequency

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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