Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

Masayuki Iwataki*, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura, Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

Original languageEnglish
Article number8902031
Pages (from-to)111-114
Number of pages4
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2020 Jan


  • Diamond
  • vertical-type device

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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