Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs

Hiroki Matsudaira, Shingo Miyamoto, Hiroaki Ishizaka, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    48 Citations (Scopus)

    Abstract

    Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.

    Original languageEnglish
    Pages (from-to)480-482
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume25
    Issue number7
    DOIs
    Publication statusPublished - 2004 Jul

    Fingerprint

    Diamond
    Cutoff frequency
    Diamonds
    Transconductance
    MISFET devices
    Field effect transistors
    Capacitance

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs. / Matsudaira, Hiroki; Miyamoto, Shingo; Ishizaka, Hiroaki; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: IEEE Electron Device Letters, Vol. 25, No. 7, 07.2004, p. 480-482.

    Research output: Contribution to journalArticle

    Matsudaira, Hiroki ; Miyamoto, Shingo ; Ishizaka, Hiroaki ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs. In: IEEE Electron Device Letters. 2004 ; Vol. 25, No. 7. pp. 480-482.
    @article{50522aeb78404c42a536bb27008ac70a,
    title = "Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs",
    abstract = "Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.",
    author = "Hiroki Matsudaira and Shingo Miyamoto and Hiroaki Ishizaka and Hitoshi Umezawa and Hiroshi Kawarada",
    year = "2004",
    month = "7",
    doi = "10.1109/LED.2004.831200",
    language = "English",
    volume = "25",
    pages = "480--482",
    journal = "IEEE Electron Device Letters",
    issn = "0741-3106",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "7",

    }

    TY - JOUR

    T1 - Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs

    AU - Matsudaira, Hiroki

    AU - Miyamoto, Shingo

    AU - Ishizaka, Hiroaki

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

    PY - 2004/7

    Y1 - 2004/7

    N2 - Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.

    AB - Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.

    UR - http://www.scopus.com/inward/record.url?scp=3342957444&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=3342957444&partnerID=8YFLogxK

    U2 - 10.1109/LED.2004.831200

    DO - 10.1109/LED.2004.831200

    M3 - Article

    AN - SCOPUS:3342957444

    VL - 25

    SP - 480

    EP - 482

    JO - IEEE Electron Device Letters

    JF - IEEE Electron Device Letters

    SN - 0741-3106

    IS - 7

    ER -