Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates

Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda, Toshihiro Kawano, Tomoyoshi Mishima, Tohru Nakamura

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific on-resistance R\rm on and high breakdown voltage V B. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific on-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-{-9}. The specific on-resistance of the diodes of 50 in diameter with the FP structure was 0.4 m2. Baliga's figure of merit (V-{B} {2}/R-{\rm on}) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.

Original languageEnglish
Article number6042353
Pages (from-to)1674-1676
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 2011 Dec
Externally publishedYes

Fingerprint

Diodes
Substrates
Electric breakdown
Electrodes
Leakage currents
Sputtering
Anodes
Plasmas

Keywords

  • Breakdown voltage
  • Gallium nitride
  • Power semiconductor devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates. / Hatakeyama, Yoshitomo; Nomoto, Kazuki; Kaneda, Naoki; Kawano, Toshihiro; Mishima, Tomoyoshi; Nakamura, Tohru.

In: IEEE Electron Device Letters, Vol. 32, No. 12, 6042353, 12.2011, p. 1674-1676.

Research output: Contribution to journalArticle

Hatakeyama, Y, Nomoto, K, Kaneda, N, Kawano, T, Mishima, T & Nakamura, T 2011, 'Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates' IEEE Electron Device Letters, vol. 32, no. 12, 6042353, pp. 1674-1676. https://doi.org/10.1109/LED.2011.2167125
Hatakeyama, Yoshitomo ; Nomoto, Kazuki ; Kaneda, Naoki ; Kawano, Toshihiro ; Mishima, Tomoyoshi ; Nakamura, Tohru. / Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 12. pp. 1674-1676.
@article{28d40c114ab449f581cc59639c288258,
title = "Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates",
abstract = "This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific on-resistance R\rm on and high breakdown voltage V B. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific on-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-{-9}. The specific on-resistance of the diodes of 50 in diameter with the FP structure was 0.4 m2. Baliga's figure of merit (V-{B} {2}/R-{\rm on}) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.",
keywords = "Breakdown voltage, Gallium nitride, Power semiconductor devices",
author = "Yoshitomo Hatakeyama and Kazuki Nomoto and Naoki Kaneda and Toshihiro Kawano and Tomoyoshi Mishima and Tohru Nakamura",
year = "2011",
month = "12",
doi = "10.1109/LED.2011.2167125",
language = "English",
volume = "32",
pages = "1674--1676",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates

AU - Hatakeyama, Yoshitomo

AU - Nomoto, Kazuki

AU - Kaneda, Naoki

AU - Kawano, Toshihiro

AU - Mishima, Tomoyoshi

AU - Nakamura, Tohru

PY - 2011/12

Y1 - 2011/12

N2 - This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific on-resistance R\rm on and high breakdown voltage V B. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific on-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-{-9}. The specific on-resistance of the diodes of 50 in diameter with the FP structure was 0.4 m2. Baliga's figure of merit (V-{B} {2}/R-{\rm on}) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.

AB - This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific on-resistance R\rm on and high breakdown voltage V B. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific on-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-{-9}. The specific on-resistance of the diodes of 50 in diameter with the FP structure was 0.4 m2. Baliga's figure of merit (V-{B} {2}/R-{\rm on}) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.

KW - Breakdown voltage

KW - Gallium nitride

KW - Power semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=81855183268&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855183268&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2167125

DO - 10.1109/LED.2011.2167125

M3 - Article

VL - 32

SP - 1674

EP - 1676

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

M1 - 6042353

ER -