Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates

Yoshitomo Hatakeyama*, Kazuki Nomoto, Naoki Kaneda, Toshihiro Kawano, Tomoyoshi Mishima, Tohru Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

101 Citations (Scopus)


This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific on-resistance R\rm on and high breakdown voltage V B. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific on-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-{-9}. The specific on-resistance of the diodes of 50 in diameter with the FP structure was 0.4 m2. Baliga's figure of merit (V-{B} {2}/R-{\rm on}) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.

Original languageEnglish
Article number6042353
Pages (from-to)1674-1676
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
Publication statusPublished - 2011 Dec 1
Externally publishedYes


  • Breakdown voltage
  • Gallium nitride
  • Power semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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