Over 3.0 gw/cm2 figure-of-merit gan p-n junction diodes on free-standing gan substrates

Yoshitomo Hatakeyama*, Kazuki Nomoto, Naoki Kaneda, Toshihiro Kawano, Tomoyoshi Mishima, Tohru Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

102 Citations (Scopus)

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