TY - GEN
T1 - Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits
AU - Otsuka, H.
AU - Yamanaka, K.
AU - Noto, H.
AU - Tsuyama, Y.
AU - Chaki, S.
AU - Inoue, A.
AU - Miyazaki, M.
PY - 2008
Y1 - 2008
N2 - In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100W output power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge.
AB - In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100W output power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge.
KW - GaN HEMT
KW - Harmonic manipulation
KW - High efficiency
KW - High power amplifier
UR - http://www.scopus.com/inward/record.url?scp=57349153117&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57349153117&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2008.4633165
DO - 10.1109/MWSYM.2008.4633165
M3 - Conference contribution
AN - SCOPUS:57349153117
SN - 9781424417810
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 311
EP - 314
BT - 2008 IEEE MTT-S International Microwave Symposium Digest, MTT
T2 - 2008 IEEE MTT-S International Microwave Symposium Digest, MTT
Y2 - 15 June 2008 through 20 June 2008
ER -