Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors

Yu Hao Chang, Yutaro Iyama, Kaito Tadenuma, Shuto Kawaguchi, Teruaki Takarada, Shaili Falina, Mohd Syamsul, Hiroshi Kawarada

Research output: Contribution to journalArticle

Abstract

pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field-effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH−1 in acid and alkaline pH regions, respectively.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2020

Keywords

  • boron-doping
  • field-effect transistors
  • fluorocarbon
  • pH sensing
  • polycrystalline diamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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