Overview and future challenge of Floating Body Cell (FBC) technology for embedded applications

Akihiro Nitayama, Takashi Ohsawa, Takeshi Hamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A one-transistor memory cell on silicon-on-insulator, called Floating Body Cell (FBC), has been developed for high density embedded DRAM applications. The functionality of a 128Mb FBC DRAM using fully compatible 90nm CMOS technology has been successfully demonstrated. The memory cell design, such as fully-depleted (FD) operation with substrate-bias, and the process integration, such as well and Cu wiring, are reviewed. The scalability and future challenge of FBC technology are discussed as well.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages94-96
Number of pages3
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: 2006 Apr 242006 Apr 26

Other

Other2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period06/4/2406/4/26

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nitayama, A., Ohsawa, T., & Hamamoto, T. (2006). Overview and future challenge of Floating Body Cell (FBC) technology for embedded applications. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 94-96). [4016618] https://doi.org/10.1109/VTSA.2006.251082